Relationship between Sr2(Ta1-x,Nbx)2O7 Crystal Phase and RF-Sputtering Plasma Condition for Metal–Ferroelectric–Insulator–Si Structure Device Formation
Relationship between Sr2(Ta1-x,Nbx)2O7 Crystal Phase and RF-Sputtering Plasma Condition for Metal–Ferroelectric–Insulator–Si Structure Device Formation
复制标题
金属-铁电-绝缘体-硅结构器件形成Sr2(Ta1-x,Nbx)2O7晶相与射频溅射等离子体条件的关系
DOI：
10.1143/jjap.45.3207
复制
发表时间：
2006
影响因子：
1.5
通讯作者：
T. Ohmi
中科院分区：
文献类型：
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作者：
I. Takahashi;H. Sakurai;T. Isogai;M. Hirayama;A. Teramoto;S. Sugawa;T. Ohmi
Sr 2（Ta 1-x，Nbx）2 O 7（Ta，x=0.3）适合用作铁电存储场效应晶体管的铁电材料，因为它具有低介电常数。然而，在非晶绝缘体（例如SiO2）上制造SOI是困难的。特别地，在Al 2 O3的情况下，因为其结晶退火温度为950 °C，所以Al 2 O3的金属元素和Si在结晶退火期间相互反应。因此，不能制造钙钛矿型的纳米晶。我们已经澄清了非晶SiO2上的铁电晶体相和射频溅射等离子体条件之间的关系。在此基础上，通过控制射频溅射等离子体的特性和微波激励等离子体的应用，发展了适用于金属-铁电-绝缘体-硅场效应晶体管型铁电随机存储器的SiO_2薄膜制备技术。
Sr2(Ta1-x,Nbx)2O7 (STN, x=0.3) is suitable for use as a ferroelectric material for ferroelectric memory field-effect transistors, because it has a low dielectric constant. However, the fabrication of STN on an amorphous insulator, such as SiO2, is difficult. In particular, in the case of STN, because its crystallization annealing temperature is 950 °C, the metal element of STN and Si react mutually during crystallization annealing. As a result, perovskite STN cannot be fabricated. We have clarified the relationship between a ferroelectric crystal phase on amorphous SiO2 and an rf-sputtering plasma condition. On the basis of the results obtained, STN film formation technologies on SiO2, which can be applied to metal–ferroelectric–insulator–Si field-effect transistor-type ferroelectric random access memories, have been developed by controlling the properties of rf-sputtering plasma and the application of microwave-excited plasma.
使用不饱和铁电极化开关实现长保持力的 Pt/SrBi_2Ta_2O_9/Hf-Al-O/Si 场效应晶体管
DOI：
--
发表时间：
2004
期刊：
Japanese Journal of Applied Physics vol.43,No.11B
影响因子：
--
作者：
Shigeki Sakai;Rajangam Ilangovan;Mitsue Takahashi
通讯作者：
Mitsue Takahashi