Mechanical-stressing measurements of formation energy of single Shockley stacking faults in 4H-SiC
Mechanical-stressing measurements of formation energy of single Shockley stacking faults in 4H-SiC
复制标题
4H-SiC 中单个肖克利堆垛层错形成能的机械应力测量
DOI：
10.35848/1882-0786/abeaf8
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发表时间：
2021
影响因子：
2.3
通讯作者：
H. Tsuchida
中科院分区：
文献类型：
--
作者：
K. Maeda;K. Murata;I. Kamata;H. Tsuchida
形成能γISSFeq。在4 H-SiC双极型器件中，单Shockley堆垛层错（1 SSF）的热平衡态是验证正向电流注入引起1 SSF反常膨胀机制的关键。作为一个功能的可变机械应力施加到一个板样品的4 H-SiC，我们系统地测量了紫外强度阈值划分光致膨胀和收缩的1 SSFs。实验结果表明，在实现1 SSF膨胀/收缩的移动的部分位错的Schmid因子不同的两种类型的1 SSF中，γISSFeq。值为4.7 ± 1.6 mJ m−2，显著小于通过透射电子显微镜测量获得的报告值14 ± 2.5 mJ m−2。
The formation energy γISSFeq. of single Shockley stacking faults (1SSFs) in thermo-equilibrium is crucial for validating the anomalous expansion mechanism of 1SSF induced by forward current injection in 4H-SiC bipolar devices. As a function of variable mechanical stress externally applied to a plate sample of 4H-SiC, we systematically measured the ultraviolet intensity thresholds demarcating photo-induced expansion and contraction of 1SSFs. The experimental results on two types of 1SSF differing in the Schmid factor of mobile partial dislocations achieving 1SSF expansion/contraction showed a γISSFeq. value of 4.7 ± 1.6 mJ m−2, significantly smaller than the reported value of 14 ± 2.5 mJ m−2 obtained by transmission electron microscopic measurements.
模拟机械应力对 4H-SiC 功率器件双极退化的影响
影响因子：
3.2
作者：
Sakakima Hiroki;Goryu Akihiro;Kano Akira;Hatano Asuka;Hirohata Kenji;Izumi Satoshi
通讯作者：
Izumi Satoshi