Characterization of carrier transport behavior of specific type dislocations in GaN by light assisted KPFM
Characterization of carrier transport behavior of specific type dislocations in GaN by light assisted KPFM
复制标题
通过光辅助 KPFM 表征 GaN 中特定类型位错的载流子传输行为
DOI：
10.1088/1361-6463/ab7516
复制
发表时间：
2020-04
影响因子：
3.4
通讯作者：
Dabing Li
中科院分区：
文献类型：
--
作者：
Cuihong Kai;Xiaojuan Sun;Yuping Jia;Ke Jiang;Zhiming Shi;Jianwei Ben;You Wu;Yong Wang;Dabing Li
由于目前缺乏可行的策略，GaN中不同类型位错上载流子输运行为的直接表征仍然是值得怀疑的。在这里，我们开发了一种将紫外光辅助开尔文探针力显微镜与缺陷选择性刻蚀技术相结合的方法。位错类型可以由刻蚀坑的形状和特定位错处的光生载流子复合行为来确定。因此，可以用紫外光辅助开尔文探针力显微镜对其进行表征，这为分析GaN中不同类型位错的载流子输运行为奠定了基础。在GaN基器件中，螺位错是主要的非辐射复合中心，也是漏电流的主要来源。这表明，由于位错生长过程中引入了施主缺陷，因此具有更高的表面电势和更高的电子浓度。反之，在边缘和混合位错周围产生势垒，从而抑制位错处的非辐射复合。本工作为指导GaN中特定类型位错的表征提供了一种可行的方法。此外，该方法还可用于其他III-氮化物材料的表征。
The direct characterization of carrier transport behavior at different types of dislocations in GaN is still questionable due to the current lack of feasible strategy. Herein, we developed a method by combining ultraviolet light-assisted Kelvin probe force microscope with defect selective etching technology. The dislocation types could be confirmed by the shape of the etching pit, and the photogenerated carrier recombination behavior at specific dislocation. Thus, it can be characterized by ultraviolet light-assisted Kelvin probe force microscope, which paves the way for analysis of carrier transport behavior at different types of dislocations in GaN. The screw dislocations are found to be the main non-radiative recombination centers, and mainly responsible for leakage current in GaN based device. This shows higher surface potential and higher electron concentration due to the donor defects introduced during dislocation growth. Conversely, a barrier is generated around the edge and mixed dislocations, which could suppress the non-radiative recombination at the dislocation. The present work provides a feasible way to direct characterization of specific type dislocations in GaN. Moreover, this method can be used to characterize other III-nitride materials.
登录
查看更多内容
影响因子：
17.1
作者：
Rui Wang;Shengnan Wang;Dongdong Zhang;Zhongjun Li;Ying Fang;Xiaohui Qiu
通讯作者：
Rui Wang;Shengnan Wang;Dongdong Zhang;Zhongjun Li;Ying Fang;Xiaohui Qiu
影响因子：
1.9
作者：
E. Gaubas;T. Ceponis;D. Dobrovolskas;T. Malinauskas;D. Meskauskaite;S. Miasojedovas;J. Mickevičius;J. Pavlov;V. Rumbauskas;E. Simoen;M. Zhao
通讯作者：
E. Gaubas;T. Ceponis;D. Dobrovolskas;T. Malinauskas;D. Meskauskaite;S. Miasojedovas;J. Mickevičius;J. Pavlov;V. Rumbauskas;E. Simoen;M. Zhao
影响因子：
1.5
作者：
T. Hamachi;T. Tohei;Masayuki Imanishi;Y. Mori;A. Sakai
通讯作者：
T. Hamachi;T. Tohei;Masayuki Imanishi;Y. Mori;A. Sakai
影响因子：
1.8
作者：
Oliver, RA;Kappers, MJ;Humphreys, CJ
通讯作者：
Humphreys, CJ
影响因子：
3.2
作者：
Arslan, Engin;Altindal, Semsettin;Ozbay, Ekmel
通讯作者：
Ozbay, Ekmel