Optical studies of non‐polar m‐plane ( 11¯00 ) InGaN/GaN multi‐quantum wells grown on freestanding bulk GaN
Optical studies of non‐polar m‐plane ( 11¯00 ) InGaN/GaN multi‐quantum wells grown on freestanding bulk GaN
复制标题
在独立体 GaN 上生长的非极性 m 面 (11´00) InGaN/GaN 多量子阱的光学研究
DOI：
10.1002/pssb.201451563
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
R. Oliver
中科院分区：
文献类型：
--
作者：
D. Sutherland;T. Zhu;J. Griffiths;F. Tang;P. Dawson;D. Kundys;F. Oehler;M. Kappers;C. Humphreys;R. Oliver
我们报道了生长在氨掺杂GaN衬底上的非极性m面InGaN/GaN多量子威尔斯（MQW）的光学性质。低温连续波（CW）光致发光谱是广泛的，具有特征的低能量尾巴。大部分的发射带衰减的时间常数约为300 ps，但详细的光致发光时间衰减和时间分辨光谱测量显示存在一个明显的缓慢衰减的发射带。这种缓慢衰减的成分是造成CW光谱中观察到的低能尾的原因。扫描电子显微镜-阴极射线发光（SEM-CL）研究表明，低能量发射带起源于跨台阶束的区域，这与GaN衬底的误切有关。随后的扫描透射电子显微镜成像表明，半极性量子阱在m-平面量子阱之间的台阶聚束上形成了连续层，并且负责较慢衰减的低能发射带。因此，我们将在光致发光研究中观察到的不对称低能发射尾归因于与GaN错切相关的跨台阶聚束的半极性小面QW的形成。
We report on the optical properties of non‐polar m‐plane InGaN/GaN multi‐quantum wells (MQWs) grown on ammonothermal bulk GaN substrates. The low temperature continuous wave (CW) photoluminescence spectra are broad with a characteristic low energy tail. The majority of the emission bands decay with a time constant ~300 ps, but detailed photoluminescence time decay and time resolved spectroscopy measurements revealed the existence of a distinct slowly decaying emission band. This slowly decaying component is responsible for the low energy tails observed in the CW spectra. Scanning electron microscopy–cathodoluminescence (SEM‐CL) studies show that the low energy emission band originates from regions across step‐bunches, which are associated to the GaN substrate miscut. Subsequent scanning transmission electron microscopy imaging demonstrates that semi‐polar QWs had formed continuous layers on the step bunches between the m‐plane QWs and were responsible for the slower decaying, low energy emission band. Thus we assign the asymmetric low energy emission tails observed in photoluminescence studies to the formation of semi‐polar facet QWs across the step bunches associated with the GaN miscut.
异质外延非极性InGaN/GaN量子阱中的复合机制
影响因子：
3.2
作者：
Badcock T
通讯作者：
Badcock T