Radiative life time of an exciton confined in a strained GaN/Ga 1- x Al x N cylindrical dot: built-in electric field effects
Radiative life time of an exciton confined in a strained GaN/Ga 1- x Al x N cylindrical dot: built-in electric field effects
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限制在应变 GaN/Ga 1- x Al x N 圆柱点中的激子的辐射寿命：内置电场效应
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
A. Peter
中科院分区：
文献类型：
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作者：
C. Lee;A. Peter
从理论上研究了纤锌矿GaN/GaAlN应变圆柱形量子点中激子的结合能。其中包括由GaN/GaAlN量子点自发极化和压电极化引起的强内建电场。数值计算使用变分程序在单波段有效质量近似内进行。通过在不同的空间方向上使用不同的空穴质量，我们的理论模型包含了价带各向异性。计算了辐射复合的激子振荡强度和激子寿命随点半径的变化规律。结果表明，强内置电场会影响激子的振荡强度和复合寿命。当圆柱形量子点高度或半径减小时，基态激子结合能和带间发射能增加，激子结合能、振子强度和辐射寿命随结构参数（高度和半径）的变化敏感地依赖于强内置电场。所得结果对某些光电器件的设计具有一定的参考价值。
The binding energy of an exciton in a wurtzite GaN/GaAlN strained cylindrical quantum dot is investigated theoretically. The strong built-in electric field due to the spontaneous and piezoelectric polarizations of a GaN/GaAlN quantum dot is included. Numerical calculations are performed using a variational procedure within the single band effective mass approximation. Valence-band anisotropy is included in our theoretical model by using different hole masses in different spatial directions. The exciton oscillator strength and the exciton lifetime for radiative recombination each as a function of dot radius have been computed. The result elucidates that the strong built-in electric field influences the oscillator strength and the recombination life time of the exciton. It is observed that the ground state exciton binding energy and the interband emission energy increase when the cylindrical quantum dot height or radius is decreased, and that the exciton binding energy, the oscillator strength and the radiative lifetime each as a function of structural parameters (height and radius) sensitively depend on the strong built-in electric field. The obtained results are useful for the design of some opto-photoelectronic devices.
影响因子：
4
作者：
S. Kako;K. Hoshino;S. Iwamoto;S. Ishida;Y. Arakawa
通讯作者：
S. Kako;K. Hoshino;S. Iwamoto;S. Ishida;Y. Arakawa