Thermal stability of electron traps in GaN grown by metalorganic chemical vapor deposition
Thermal stability of electron traps in GaN grown by metalorganic chemical vapor deposition
复制标题
金属有机化学气相沉积生长的 GaN 中电子陷阱的热稳定性
DOI：
10.1063/1.1814801
复制
发表时间：
2004
影响因子：
4
通讯作者：
H. Morkoç
中科院分区：
文献类型：
--
作者：
D. Johnstone;S. Doğan;J. Leach;Y. Moon;Y. Fu;Y. Hu;H. Morkoç
利用深能级瞬态光谱研究了金属有机化学气相沉积n型氮化镓中电子阱的热稳定性。在几个700K的退火循环过程中，160和500K的陷阱浓度增加了5倍以上，而320K的峰值仅增加了1.19倍。重复退火后陷阱浓度的增加可能是由于移动陷阱或钝化剂的损失。氢很可能以高浓度存在于脱毛层中，它的钝化作用可能会随着退火而消失。
Deep level transient spectroscopy was used to investigate the thermal stability of electron traps in n-type GaN grown by metalorganic chemical vapor deposition. The concentration of traps at 160 and at 500K increased more than fivefold over the course of several 700K anneal cycles, while a peak at 320K increased by a factor of only 1.19. The increase in the trap concentration with repeated annealing might be due to a mobile trap or loss of passivant. Hydrogen is very likely present in high concentration in the epilayer, and its passivating effects may be lost with annealing.
DOI：
10.1007/978-3-642-58562-3
发表时间：
1999
期刊：
--
影响因子：
--
作者：
H. Morkoç
通讯作者：
H. Morkoç