Effects of nitrogen flux and RF sputtering power on the preparation of crystalline a-plane AlN films on r-plane sapphire substrates
Effects of nitrogen flux and RF sputtering power on the preparation of crystalline a-plane AlN films on r-plane sapphire substrates
复制标题
氮气流量和射频溅射功率对r面蓝宝石衬底上a面结晶AlN薄膜制备的影响
DOI：
10.1088/1361-6641/ac9f62
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发表时间：
2022-11
影响因子：
1.9
通讯作者：
Jianchang Yan
中科院分区：
文献类型：
--
作者：
Tingsong Cai;Yanan Guo;Zhibin Liu;Ruijie Zhang;Bin Xue;Chong Wang;Naixin Liu;Xiaoyan Yi;Jinmin Li;Junxi Wang;Jianchang Yan
抽象。高质量的A面氮化铝（AlN）是制备高性能非极性深紫外光电子器件的关键。本文采用反应磁控溅射和高温退火相结合的方法在r面蓝宝石衬底上制备了a面AlN薄膜。研究了N2流量和射频溅射功率对a面AlN薄膜的晶体质量、表面形貌和面内应力状态的影响。结果表明，高温退火的a面AlN（HTA-AlN）薄膜的性能正依赖于溅射AlN（SP-AlN）薄膜的初始状态。增加N2流量或射频溅射功率可以通过降低沉积粒子的动能来改善SP-AlN薄膜的结晶质量，这有利于a面AlN的沉积。较高的N2流量平滑的表面形态，由于减轻轰击效果，这是证实了扩大的面内张应力状态。然而，由于加速的沉积速率，较高的溅射功率导致较粗糙的表面。通过优化溅射工艺参数，获得了高质量的a面HTA-AlN模板，其（11-20）面X射线摇摆曲线沿着[0001]和[1-100]方向的半高宽分别为1188和1224 arcsec。表面呈现有序的条纹状形貌，均方根值为0.79 nm。本工作为制备高质量的a面AlN模板提供了一种方便有效的方法，并加速了非极性深紫外发光二极管器件的广泛应用。
Abstract. A-plane aluminum nitride (AlN) with high quality is crucial to fabricate high-performance non-polar deep-ultraviolet optoelectronic devices. In this work, we prepared crystalline a-plane AlN films on r-plane sapphire substrates by combining reactive magnetron sputtering and high temperature annealing (HTA). The effects of N2 flux and radio frequency (RF) sputtering power on the crystal quality, the surface morphology and the in-plane stress state of a-plane AlN films were comprehensively investigated. The results suggest that the properties of high temperature annealed a-plane AlN (HTA-AlN) films positively depend on the initial states of the sputtered AlN (SP-AlN) films. Increasing the N2 flux or the RF sputtering power can improve the crystalline quality of SP-AlN films by reducing the kinetic energy of deposited particles, which facilitates a-plane AlN deposition. A higher N2 flux smoothens the surface morphology due to the relieved bombardment effect, which is confirmed by the enlarged in-plane tensile stress state. However, a higher sputtering power leads to a rougher surface because of the accelerated deposition rate. With optimized sputtering parameters, a high-quality a-plane HTA-AlN template was obtained with full width at half maximum values of (11–20) plane x-ray rocking curves as low as 1188 and 1224 arcsec along [0001] and [1–100] directions, respectively. The surface presents an ordered stripe-like morphology with a root-mean-square value of 0.79 nm. Our work provides a convenient and effective strategy to prepare high quality a-plane AlN templates and accelerate the versatile application of non-polar deep-ultraviolet light-emitting diode devices.
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影响因子：
1.8
作者：
H. Kröncke;S. Figge;T. Aschenbrenner;D. Hommel
通讯作者：
H. Kröncke;S. Figge;T. Aschenbrenner;D. Hommel
影响因子：
0.6
作者：
Jihoon Kim;Y. Seo;S. Hwang;Soohwan Jang;K. Baik
通讯作者：
Jihoon Kim;Y. Seo;S. Hwang;Soohwan Jang;K. Baik
影响因子：
1.8
作者：
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通讯作者：
N. Okada;N. Kato;S. Sato;T. Sumii;Naoki Fujimoto;M. Imura;K. Balakrishnan;M. Iwaya;S. Kamiyama;H. Amano;I. Akasaki;T. Takagi;T. Noro;A. Bandoh
影响因子：
3.2
作者：
L. Cancellara;S. Hagedorn;S. Walde;D. Jaeger;M. Albrecht
通讯作者：
L. Cancellara;S. Hagedorn;S. Walde;D. Jaeger;M. Albrecht
影响因子：
1.8
作者：
D. V. Dinh;H. Amano;M. Pristovsek
通讯作者：
D. V. Dinh;H. Amano;M. Pristovsek