Effect on thermal stability of a Cu/Ta/Si heterostructure of the incorporation of cerium oxide into the Ta barrier
Effect on thermal stability of a Cu/Ta/Si heterostructure of the incorporation of cerium oxide into the Ta barrier
复制标题
Ta势垒中掺入氧化铈对Cu/Ta/Si异质结构热稳定性的影响
DOI：
10.1063/1.367904
复制
发表时间：
1998
影响因子：
3.2
通讯作者：
Sung
中科院分区：
文献类型：
--
作者：
D. Yoon;H. Baik;Sung
The effects of CeO2 addition on the microstructural change of a Ta diffusion barrier film and thermal stability of the Cu/Ta/Si system were investigated. When a Ta layer was prepared with CeO2 addition, the silicide formation was retarded up to 800 °C. The Cu/Ta+CeO2/Si system retained its structure up to 800 °C without an increase in stack resistivity, while the Cu/Ta/Si structure degraded after annealing at 550 °C. The Ta+CeO2 diffusion barrier showed an amorphous microstructure and chemically strong bonds with Ta–Ce–O. It appeared that the thermal stability of the Cu/Ta+CeO2 interface as well as the Ta+CeO2/Si interface was higher than that of both Cu/Ta and Ta/Si interfaces. Therefore, the Ta film prepared by CeO2 addition effectively prevented the interdiffusion of Cu and Si through the diffusion barrier up to 800 °C.
影响因子：
3.2
作者：
Chin-An Chang
通讯作者：
Chin-An Chang