Influence of Crystal Orientation of Ru Under-Layer on Initial Growth of Copper Chemical Vapor Deposition
Influence of Crystal Orientation of Ru Under-Layer on Initial Growth of Copper Chemical Vapor Deposition
复制标题
钌底层晶体取向对铜化学气相沉积初始生长的影响
DOI：
--
复制
发表时间：
2006
期刊：
影响因子：
--
通讯作者：
Y. Shimogaki
中科院分区：
文献类型：
--
作者：
Hoon Kim;Y. Kojima;H. Sato;N. Yoshii;S. Hosaka;Y. Shimogaki
研究了Ru晶体取向对化学气相沉积（CVD）Cu沉积行为的影响。通过调节溅射温度，可以调节Ru薄膜的晶向。在300 °C和室温下分别溅射得到Ru（001）和无规取向膜。具有（001）晶向的CVD Cu在Ru上具有光滑的形貌和强的（111）峰。然而，在具有随机取向的Ru膜上的CVD Cu具有粗糙的表面和随机取向。Cu（111）和Ru（001）之间的低晶格失配实现了CVD Cu膜的良好形貌和强（111）取向，这与我们的晶格失配概念一致。
The effect of Ru crystal orientation on the deposition behavior of chemical vapor deposition (CVD) Cu was investigated. The crystal orientation of Ru films was modulated by adjusting sputtering temperature. Ru(001) and random orientation films were obtained by sputtering at 300 °C and room temperature, respectively. CVD Cu on Ru with the (001) crystal orientation had a smooth morphology and a strong (111) peak. However, CVD Cu on the Ru film with the random orientation had a rough surface and a random orientation. A low lattice misfit between Cu(111) and Ru(001) realized a good morphology and a strong (111) orientation of CVD Cu films, which coincide with our lattice misfit concept.
使用超临界二氧化碳在深纳米沟槽/孔中沉积铜和钌薄膜
DOI：
--
发表时间：
2004
期刊：
Japanese Journal of Applied Physics. 43
影响因子：
--
作者：
E.Kondoh;K.Shigama;E.Kondoh;E.Kondoh;E.Kondoh
通讯作者：
E.Kondoh