Short lifetime components in the relaxation of boron acceptors in silicon
Short lifetime components in the relaxation of boron acceptors in silicon
复制标题
硅中硼受体弛豫中的短寿命成分
DOI：
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
B. Murdin
中科院分区：
文献类型：
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作者：
K. Saeedi;N. Stavrias;B. Redlich;H. Riemann;N. Abrosimov;P. Becker;H. Pohl;M. Thewalt;B. Murdin
我们提出了时间分辨的弛豫测量的轨道状态之间
We present time-resolved measurements of the relaxation between the orbital states of the
shallow acceptor boron in silicon. The silicon host was enriched Si-28, which exhibits life-time
broadened absorption lines. We observed a wide range of T1 lifetimes from 6ps to 130ps
depending on the excited state and the pump intensity. The fastest transients have not been
observed previously in the time domain, and they are caused by the phonon relaxation
responsible for the small-signal frequency domain line-width. We identify the slower
components with an ionisation/recombination/cascade pathway.
影响因子：
12.5
作者：
Vinh N
通讯作者：
Vinh N