Rise and fall of ferromagnetism in O-irradiated Al2O3 single crystals
Rise and fall of ferromagnetism in O-irradiated Al2O3 single crystals
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O 辐照 Al2O3 单晶中铁磁性的升降
DOI:
10.1063/1.4922788
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发表时间:
2015-06
影响因子:
3.2
通讯作者:
Ye Bangjiao
中科院分区:
文献类型:
--
作者:
Qiang Li;Xu Juping;Liu Ji;ang;Du Huaijiang;Ye Bangjiao
In dilute magnetic semiconductors studies, sapphire was usually used as non-magnetic substrate for films. We observed weak ferromagnetic component in Al2O3 single crystal substrate, and excluded the possibility of ferromagnetic contaminations carefully by inductively coupled plasma mass spectrometry and X-ray photoelectron spectroscopy. The ferromagnetism rise and fall during the process of annealing-oxygen irradiation-annealing of the sapphire. The ferromagnetic changes are consistent with Al-vacancy related defects detected by positron annihilation spectroscopy. With first-principle calculations, we confirm that Al-vacancy can introduce magnetic moment for 3 mu B in Al2O3 crystal and form stable V-Al-V-Al ferromagnetic coupling at room temperature. (C) 2015 AIP Publishing LLC.
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DOI:
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发表时间:
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期刊:
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影响因子:
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