Preparing Nitrogen-Doped Multiwalled Carbon Nanotubes with Regionally Controllable Heterojunction Structure by Nondestructive Postdoping with the Assistance of Heating Fluorination
Preparing Nitrogen-Doped Multiwalled Carbon Nanotubes with Regionally Controllable Heterojunction Structure by Nondestructive Postdoping with the Assistance of Heating Fluorination
复制标题
加热氟化辅助无损后掺杂制备区域可控异质结结构氮掺杂多壁碳纳米管
DOI：
10.1021/acs.jpcc.9b03884
复制
发表时间：
2019-06
影响因子：
3.7
通讯作者：
Wang Xu
中科院分区：
文献类型：
--
作者：
Qn Rui;Qan Qingling;Liu Yang;Ou Anping;Li Yulong;Liu Xin;Liu Xiangyang;Wang Xu
本文提出了一种可行且通用的方法，借助外层氟化多壁碳纳米管（o-FMWNCT）的脱氟，制备区域可控的皮芯异质结构氮杂原子掺杂多壁碳纳米管（N-o-FMWCNT）。首先，通过精心设计的直接加热氟化法，在 25 至 180 °C 的温度下制备出外氟化管封装完整内管的 o-FMWCNT。随后，在NH3气氛下的温和温度（400℃）下进行氮掺杂。根据X射线光电子能谱、高分辨率透射电子显微镜和元素分析的结果，约4.97原子％的初级吡啶-氮构型的氮-杂原子通过C-N键的重组成功掺杂到o-FMWCNT外管的碳骨架中。由于其内管的完整性，N-o-FMWCNT 被赋予了相对较高的电导率（5.46 × 10–2 S·m–...
This paper presents a feasible and universal approach to fabricate regionally controllable nitrogen-heteroatom-doped multiwalled carbon nanotubes with a skin-core heterostructure (N-o-FMWCNT) with the assistance of defluorination in outer-layered fluorinated MWCNTs (o-FMWNCT). First, o-FMWCNT with outer fluorinated tubes encapsulating intact inner tubes was prepared through well-designed direct heating fluorination with temperatures from 25 to 180 °C. Subsequently, nitrogen-doping was implemented at a mild temperature under NH3 atmosphere (400 °C). According to the results of X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and elemental analysis, about 4.97 atom % nitrogen-heteroatom with primary pyridine-nitrogen configuration was successfully doped into the carbon skeleton at the outer tube of o-FMWCNT with the recombination of C–N bonds. Because of the integrity of its inner tubes, the N-o-FMWCNT was endowed with a relatively high-level conductivity (5.46 × 10–2 S·m–...
登录
查看更多内容
影响因子：
29.4
作者：
Weili Zhang;Chuan Xu;Chaoqun Ma;Guoxian Li;Yuzuo Wang;Kaiyu Zhang;Feng Li;Chang Liu;
通讯作者：
Weili Zhang;Chuan Xu;Chaoqun Ma;Guoxian Li;Yuzuo Wang;Kaiyu Zhang;Feng Li;Chang Liu;
通过 N 掺杂增加与 N 掺杂 CNT/碳交联的 MoS2 中的结构缺陷，以增强氧还原中的电荷转移
影响因子：
6.6
作者：
Liu Yang;Zhuang Cai;Liang Hao;Lingling Ran;Xin Xu;Ying Dai;Siyu Pan;Baojian Jing;Jinlong Zou
通讯作者：
Jinlong Zou
影响因子：
10.9
作者：
Lai, Wenchuan;Wang, Xu;Liu, Xiangyang
通讯作者：
Liu, Xiangyang
影响因子：
9.1
作者：
Kharitonov, A. P.;Simbirtseva, G. V.;Chukov, D. I.
通讯作者：
Chukov, D. I.
影响因子：
9.5
作者：
Wang, Xu;Dai, Yunyang;Liu, Xiangyang
通讯作者：
Liu, Xiangyang