Competitive adsorption and two-site occupation effects in metal-organic chemical vapor deposition of ZnO

Competitive adsorption and two-site occupation effects in metal-organic chemical vapor deposition of ZnO
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ZnO金属有机化学气相沉积中的竞争吸附和双位点占据效应

DOI:
10.1063/1.2731529
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发表时间:
2007-04
影响因子:
4
通讯作者:
Zheng, Y. D.
Zheng, Y. D.
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Shi, Y.;Liu, W.;Sun, X. W.;Kwong, D. L.;Lo, G. Q.;Ye, J. D.;Zhang, R.;Zhu, S. M.;Gu, S. L.;Zheng, Y. D.

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通过对竞争吸附和双位占据效应的综合模拟,研究了金属有机化学气相沉积法制备ZnO外延层的生长动力学。所建立的模型,基于Langmuir-Hinshelwood机制,很好地解释了异常的增长率依赖于VI/II的比例为不同的增长制度。结果表明,对于表面反应和传质限制生长,竞争吸附和双位占据效应分别占主导地位的表面吸附过程。提出的动力学模型定量匹配范围广泛的实验,提供了一个新的洞察一般MOCVD生长机制的二元化合物材料。
The growth dynamics of ZnO epilayers by metal-organic chemical vapor deposition have been investigated by a comprehensive modeling of the competitive adsorption and two-site occupation effects. The established model, based on Langmuir-Hinshelwood mechanism, well explains the abnormal growth rate dependence on the VI/II ratio for different growth regimes. It is found that, for surface reaction and mass-transport limited growth, the competitive adsorption and two-site occupation effects dominate the surface adsorption process, respectively. The proposed dynamics model quantitatively well matched a wide range of experiments, providing a new insight into the general MOCVD growth mechanism for binary compound materials.
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