Synchrotron Photoemission Spectroscopy Study of p-GaInP2(100) Electrodes Emersed from Aqueous HCl Solution under Cathodic Conditions
Synchrotron Photoemission Spectroscopy Study of p-GaInP2(100) Electrodes Emersed from Aqueous HCl Solution under Cathodic Conditions
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阴极条件下HCl水溶液中p-GaInP2(100)电极的同步辐射光谱研究
DOI：
10.1021/acs.jpcc.7b01343
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发表时间：
2017
影响因子：
3.7
通讯作者：
Jaegermann
中科院分区：
文献类型：
--
作者：
Lebedev;Calvet;Kaiser;Jaegermann
用高分辨表面灵敏同步辐射光电子能谱研究了阴极极化下p-GaInP_2（100）/1 M HCl溶液界面的（光）电化学过程。发现在黑暗中向p-GaInP 2（100）/1 M HCl溶液界面施加阴极偏压时，电化学过程在相对于可逆氢电极（RHE）约-1.0 V的偏压下开始，其中通过半导体/电解质界面的阴极电流开始上升。在黑暗中施加更高的阴极偏压下，羟基和金属镓在表面积累，这伴随着半导体的功函数的降低。羟基的积累可能仅与半导体/电解质界面处的水分子的分裂有关，因为HCl水溶液本质上不含羟基。在可见光照射下，羟基和金属镓的积累加速，这表明光生电子参与了表面电化学反应。在没有同时形成金属铟的情况下形成金属镓证明了GaInP 2化合物的In-P键比Ga-P键更稳定地抵抗阴极腐蚀。
(Photo)electrochemical processes occurring under cathodic polarization at the p-GaInP2(100)/1 M HClaqsolution interface were investigated in detail by high-resolution surface sensitive synchrotron-radiation photoemission spectroscopy. It was found that on application of the cathodic bias in the dark to the p-GaInP2(100)/1 M HClaqsolution interface the electrochemical processes are started at a bias of about −1.0 V vs reversible hydrogen electrode (RHE), where cathodic current passing through the semiconductor/electrolyte interface starts to rise. Under higher cathodic bias applied in the dark, hydroxyl groups and metallic gallium are accumulated at the surface, which is accompanied by a decrease in work function of the semiconductor. Accumulation of hydroxyl groups can be related only to splitting of water molecules at the semiconductor/electrolyte interface, since the aqueous HCl solution contains no hydroxyl groups intrinsically. Accumulation of hydroxyl groups and metallic gallium is accelerated under visible light illumination, which indicates participation of photogenerated electrons in the surface electrochemical reactions. The formation of the metallic gallium without simultaneous metallic indium formation testifies that the In–P bonds of the GaInP2compound are more stable against cathodic corrosion than the Ga–P bonds.
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影响因子：
3.7
作者：
Fan Yang;A. Nielander;R. Grimm;N. Lewis
通讯作者：
Fan Yang;A. Nielander;R. Grimm;N. Lewis
通过冷冻电解质方法对半导体/电解质界面进行同步光发射分析：2-丙醇中的 HCl 与 GaAs(100) 的相互作用。
DOI：
10.1021/jp056375u
发表时间：
2006
期刊：
The journal of physical chemistry. B
影响因子：
--
作者：
T. Mayer;M. Lebedev;R. Hunger;W. Jaegermann
通讯作者：
W. Jaegermann
氯对 InP(100) 的表面蚀刻
影响因子：
1.9
作者：
W. Hung;J. Hsieh;H. Hwang;Hsin;Che
通讯作者：
Che
富磷InP(001)表面的原子结构和成分
影响因子：
6.7
作者：
P. Vogt;A. Frisch;T. Hannappel;S. Visbeck;F. Willig;C. Jung;R. Follath;W. Braun;W. Richter;N. Esser
通讯作者：
N. Esser
用氨水溶液蚀刻 GaAs(100)：同步加速器光电发射光谱研究
DOI：
--
发表时间：
2010
期刊：
影响因子：
--
作者：
M. Lebedev;E. Mankel;T. Mayer;W. Jaegermann
通讯作者：
W. Jaegermann