Microelectronic test structures for the development of a strip sensor technology for high energy physics experiments
Microelectronic test structures for the development of a strip sensor technology for high energy physics experiments
复制标题
用于开发高能物理实验带状传感器技术的微电子测试结构
DOI：
10.1016/j.nima.2020.163971
复制
发表时间：
2020
影响因子：
1.4
通讯作者：
Y. Unno
中科院分区：
文献类型：
--
作者：
J. Fernandez;V. Fadeyev;C. Fleta;J. Hacker;M. Ullán;Y. Unno
大型强子对撞机（HL-LHC）的升级计划要求为欧洲核子研究中心的主要实验开发改进的跟踪硅传感器。这些设备必须满足不同探测器针对HL-LHC恶劣工作条件所制定的规格，以保证跟踪系统在实验生命周期内的正常性能。在ATLAS内部跟踪传感器市场调查的框架下，合作设计了一个原型条形传感器布局，并由英飞凌技术公司在6英寸基板上制造。这项工作提出了一套包含在该原型中的测试结构，能够评估关键器件和技术参数，如条带植入物电阻率，偏置电阻，耦合电容，表面电流或传感器边缘设计对器件击穿电压的影响。对质子和伽马辐照前后的这些参数进行了完整的分析，直至影响和剂量与未来HL-LHC实验中预期的相似。本研究显示了微电子测试结构在高能物理实验跟踪硅传感器技术发展中的重要性。
The planned upgrade of the Large Hadron Collider, the HL-LHC, requires the development of improved tracking silicon sensors for the main CERN experiments. These devices must fulfil the specifications established by the different detectors for the adverse HL-LHC working conditions, in order to guarantee the proper performance of the tracking systems during the lifetime of the experiments. In the framework of the ATLAS Inner-Tracker sensor Market Survey, a prototype strip sensor layout has been designed by the collaboration, and fabricated in 6-inch substrates by Infineon Technologies AG. This work presents a set of test structures included in this prototype, capable to evaluate key device and technological parameters as strip implant resistivity, bias resistance, coupling capacitance, surface currents, or the influence of the sensor edge design in device breakdown voltage. A complete analysis of these parameters before and after proton and gamma irradiations, up to fluences and doses similar to the ones expected in the future HL-LHC experiments, is presented. This study shows the relevance of microelectronic test structures in the development of technologies of tracking silicon sensors for High Energy Physics experiments.
影响因子：
1.3
作者：
Adam, W.;Bergauer, T.;Johns, W.
通讯作者：
Johns, W.