Comparison of AlN encapsulants for high-temperature GaN annealing
Comparison of AlN encapsulants for high-temperature GaN annealing
复制标题
用于高温 GaN 退火的 AlN 封装材料的比较
DOI：
10.7567/apex.7.121003
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发表时间：
2014
影响因子：
2.3
通讯作者：
F. Kub
中科院分区：
文献类型：
--
作者：
Jordan D. Greenlee;T. Anderson;B. Feigelson;J. Hite;K. Bussmann;C. Eddy;K. Hobart;F. Kub
研究了四种不同的GaN高温退火帽盖结构。所研究的帽包括两层MOCVD沉积的帽和三种不同的MOCVD +溅射层帽结构。在1500 °C的退火脉冲之后，MOCVD盖表面由于下面的GaN的分解而粗糙化。通过观察AlN盖蚀刻后的热分解坑，GaN分解是明显的。结果发现，MOCVD帽与溅射帽的组合大大减少了GaN分解的量，因为热蚀刻坑的密度降低了99.4%。
Four different capping structures for high-temperature annealing of GaN were studied. The studied caps included a two-layer MOCVD-deposited cap and three different MOCVD + sputtered layer capping structures. After an annealing pulse of 1500 °C, the MOCVD cap surface roughened due to decomposition of the underlying GaN. GaN decomposition was evident via observation of thermal decomposition pits after etching of the AlN caps. It was found that the combination of an MOCVD cap with a sputtered cap greatly reduced the amount of GaN decomposition as the density of thermal etch pits decreased by 99.4%.
影响因子：
20.6
作者：
Mishra, Umesh K.;Shen, Likun;Wu, Yi-Feng
通讯作者：
Wu, Yi-Feng