High performance PbSe colloidal quantum dot vertical field effect phototransistors
High performance PbSe colloidal quantum dot vertical field effect phototransistors
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高性能PbSe胶体量子点垂直场效应光电晶体管
DOI：
10.1088/0957-4484/27/42/425204
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发表时间：
2016-09
期刊：
影响因子：
3.5
通讯作者：
Yao, Jianquan
中科院分区：
文献类型：
--
作者：
Yang, Junbo;Dai, Haitao;Zhang, Guizhong;Yao, Jianquan
本文研究了基于硒化铅胶体量子点 (PbSe CQD) 的用于红外光检测的垂直场效应光电晶体管 (VFEPT)，使用 Au/Ag 纳米线作为源透明电极。 VFEPT 的优点是易于制造超短沟道长度器件，因为沟道长度仅由 PbSe CQD 有源层的厚度 (260 nm) 决定。在超短通道中，光激发载流子快速（以纳秒为单位）转移到漏极。一旦空穴（电子）到达漏极，空穴（电子）就会从源极补充。因此，在单次电子空穴光生成之后，多个空穴在超短沟道中循环。因此，该器件表现出优于横向结构的光电导特性。 PbSe CQD VFEPT 在室温下可在低至 1 伏的低电压下实现双极性操作。此外，该器件在808 nm激光照射下还实现了2×104 A W−1和7×1012 Jones的高光响应度和高比探测率。通过这种自组装溶液工艺制备的基于透明电极的近红外VFEPT显示出在电子和光电子领域的应用前景。
Here, vertical field effect phototransistors (VFEPTs) based on lead selenide colloidal quantum dots (PbSe CQDs) for infrared photo detection were investigated, using Au/Ag nanowires as the source transparent electrode. VFEPTs have the advantage of easy fabrication of ultrashort channel length devices, as the channel length is simply determined here by the PbSe CQDs active layer’s thickness (260 nm). In ultrashort channels, photo-excited carriers quickly (in nanoseconds) transfer to the drain. As soon as a hole (electron) reaches the drain, a hole (electron) is replenished from the source. Accordingly, multiple holes circulate in the ultrashort channel following a single electron–hole photo generation. As a result, the device exhibits superior photoconductive properties over the lateral structure. PbSe CQD VFEPTs show ambipolar operation under low voltage down to one volt at room temperature. Moreover, high photo responsivity and high specific detectivity of 2 × 104 A W−1 and 7 × 1012 Jones are also achieved in the devices under 808 nm laser illumination. The transparent electrode-based near infrared VFEPTs prepared through this self-assembly solution process show promise for applications in electronics and photoelectronics.
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影响因子：
4
作者：
Xiaoxian Song;Yating Zhang;Ran Wang;Mingxuan Cao;Yongli Che;Jianlong Wang;Haiyan Wang;Lufan Jin;H. Dai;X. Ding;Guizhong Zhang;Jianquan Yao
通讯作者：
Xiaoxian Song;Yating Zhang;Ran Wang;Mingxuan Cao;Yongli Che;Jianlong Wang;Haiyan Wang;Lufan Jin;H. Dai;X. Ding;Guizhong Zhang;Jianquan Yao
影响因子：
17.1
作者：
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通讯作者：
Nozik, Arthur J.
影响因子：
29.4
作者：
Qianwang Chen;Xiaoguang Li;Yuheng Zhang;Y. Qian
通讯作者：
Qianwang Chen;Xiaoguang Li;Yuheng Zhang;Y. Qian
影响因子：
--
作者：
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通讯作者：
Yan, Feng
影响因子：
29.4
作者：
Tang, Jiang;Sargent, Edward H.
通讯作者：
Sargent, Edward H.