Constructing Oxygen Vacancies on Bi2MoO6 Nanosheets by Aqueous Ammonia Etching with Enhanced Photocatalytic NO Oxidation Performance
Constructing Oxygen Vacancies on Bi2MoO6 Nanosheets by Aqueous Ammonia Etching with Enhanced Photocatalytic NO Oxidation Performance
复制标题
通过氨水蚀刻在 Bi2MoO6 纳米片上构建氧空位，增强光催化 NO 氧化性能
DOI：
10.1021/acs.energyfuels.2c01660
复制
发表时间：
2022-08
期刊：
影响因子：
5.3
通讯作者：
Shengyao Wang
中科院分区：
文献类型：
--
作者：
Xinling Wen;Xiaolong Jiang;Tongxin Jin;Hao Chen;Xiaohu Zhang;Shengyao Wang
光催化技术被认为是处理氮氧化物的理想策略。在半导体上构建氧空位（OVs）可以大大提高光生电荷分离效率、分子活化和光催化活性。然而，在温和条件下引入OVs的新方法仍然缺乏。在目前的工作中，{001}面暴露的Bi 2 MoO 6（BMO）纳米片在温和的条件下在氨水中处理。通过氨水刻蚀{MoO 4}2层，成功地将OV引入BMO中，制备了富含OV的BMO-OH催化剂。光催化性能测试表明，在BMO-OH催化剂上获得了47%的NO去除率，这是原始BMO材料的约2.2倍。增强的光活性归因于由引入的OV引起的BMO-OH的高反应物吸附和ROS产生特性。这些发现为OVs结构和光催化技术提供了新的见解。
Photocatalytic technology is deemed as an ideal strategy to deal with nitrogen oxides. Constructing oxygen vacancies (OVs) on semiconductors can greatly promote photogenerated charge separation efficiency, molecular activation, and photocatalytic activity. However, a novel method for OVs introduction under moderate conditions is still lacking. In the present work, a {001} facet exposed Bi2MoO6(BMO) nanosheet is treated in aqueous ammonia under mild conditions. In this procedure, OVs are successfully introduced into BMOviaetching of the {MoO4}2–layer by aqueous ammonia, and a OVs-rich BMO-OH catalyst is prepared. Photocatalytic performance tests convey that a NO removal ratio of 47% is obtained on the BMO-OH catalyst, which is about 2.2 times higher than that of pristine BMO material. The enhanced photoactivity is attributed to high reactant adsorption and ROS generation properties of BMO-OH caused by the introduced OVs. These findings provide new insights into OVs construction and photocatalytic technology.
登录
查看更多内容
DOI：
10.1021/acsanm.9b02276
发表时间：
2020-01
期刊：
--
影响因子：
--
作者：
Yang Liu;Ying Zhou;Shan Yu;Zhanghui Xie;Yi Chen;Kaiwen Zheng;S. Mossin;Wei Lin;J. Meng
通讯作者：
Yang Liu;Ying Zhou;Shan Yu;Zhanghui Xie;Yi Chen;Kaiwen Zheng;S. Mossin;Wei Lin;J. Meng
影响因子：
9.5
作者：
Huizhong Wu;Chaowei Yuan;Ruimin Chen;Jiadong Wang;F. Dong;Jieyuan Li;Yanjuan Sun
通讯作者：
Huizhong Wu;Chaowei Yuan;Ruimin Chen;Jiadong Wang;F. Dong;Jieyuan Li;Yanjuan Sun
化学刻蚀制备均匀介孔Bi@Bi2O3纳米球，增强可见光诱导光催化氧化NOx性能
影响因子：
15.1
作者：
Peng Zhang;Yu Huang;Yongfang Rao;Meijuan Chen;Xinwei Li;Wingkei Ho;Shuncheng Lee;Junji Cao
通讯作者：
Junji Cao
影响因子：
29.4
作者：
Yang Zheng;Tengfei Zhou;Xudong Zhao;W. Pang;Hong Gao;Sean Li;Zhen Zhou;Huakun Liu;Zaiping Guo-Za
通讯作者：
Yang Zheng;Tengfei Zhou;Xudong Zhao;W. Pang;Hong Gao;Sean Li;Zhen Zhou;Huakun Liu;Zaiping Guo-Za
影响因子：
12.9
作者：
B. Wang;Meixin Wang;Lina Han;Yaqin Hou;W. Bao;Changming Zhang;Gang Feng;L. Chang;Zhanggeng Huang-Zha
通讯作者：
B. Wang;Meixin Wang;Lina Han;Yaqin Hou;W. Bao;Changming Zhang;Gang Feng;L. Chang;Zhanggeng Huang-Zha