Sputtered iridium oxide films for neural stimulation electrodes.
Sputtered iridium oxide films for neural stimulation electrodes.
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DOI：
10.1002/jbm.b.31223
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发表时间：
2009-05
期刊：
影响因子：
--
通讯作者：
Rizzo JF
中科院分区：
文献类型：
--
作者：
Cogan SF;Ehrlich J;Plante TD;Smirnov A;Shire DB;Gingerich M;Rizzo JF
用直流反应溅射方法在金属Ir靶上沉积的氧化Ir膜(SIROF)作为神经记录和刺激电极的潜力在体外得到了表征。SIROF是在金金属化上沉积在柔性多电极阵列上的，该阵列是在薄的(15μm)聚酰亚胺衬底上制备的。SIROF厚度和电极面积分别为2 0 0-1 300 nm和1 960-1 2 5，6 0 0μm2。SIROF的电荷注入能力是在无机间隙流体模型中对电荷平衡的阴极第一电流脉冲的响应进行评估的。电荷注入容量是阴极脉冲宽度(0.2-1ms)和脉冲间隔期间的电位偏置(0.0-0.7V vs.Ag|AgCl)的函数。根据脉冲参数和电极面积的不同，电荷注入容量在1-9mC/cm2之间，与在类似条件下脉冲的活性氧化Ir膜(AIROF)相当。还测定了与在神经电极上使用SIROF有关的其他参数，包括阻抗的厚度依赖关系(0.05-105赫兹)和维持脉冲间区偏置所需的电流。
Sputtered iridium oxide films (SIROFs) deposited by DC reactive sputtering from an iridium metal target have been characterized in vitro for their potential as neural recording and stimulation electrodes. SIROFs were deposited over gold metallization on flexible multielectrode arrays fabricated on thin (15 μm) polyimide substrates. SIROF thickness and electrode areas of 200–1300 nm and 1960–125,600 μm2, respectively, were investigated. The charge-injection capacities of the SIROFs were evaluated in an inorganic interstitial fluid model in response to charge-balanced, cathodal-first current pulses. Charge injection capacities were measured as a function of cathodal pulse width (0.2–1 ms) and potential bias in the interpulse period (0.0 to 0.7 V vs. Ag|AgCl). Depending on the pulse parameters and electrode area, charge-injection capacities ranged from 1–9 mC/cm2, comparable with activated iridium oxide films (AIROFs) pulsed under similar conditions. Other parameters relevant to the use of SIROF on nerve electrodes, including the thickness dependence of impedance (0.05–105 Hz) and the current necessary to maintain a bias in the interpulse region were also determined.
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DOI：
10.1109/tnsre.2005.848687
发表时间：
2005-06-01
影响因子：
4.9
作者：
Mahadevappa, M;Weiland, JD;Humayun, MS
通讯作者：
Humayun, MS
影响因子：
1.8
作者：
Humayun, MS;Weiland, JD;de Juan, E
通讯作者：
de Juan, E
影响因子：
4.4
作者：
Rizzo, JF;Wyatt, J;Shire, D
通讯作者：
Shire, D
影响因子：
4.6
作者：
Cogan, SF;Troyk, PR;Plante, TD
通讯作者：
Plante, TD
影响因子：
3
作者：
Cogan, SF;Guzelian, AA;McCreery, DB
通讯作者：
McCreery, DB