Spin-phonon relaxation times in centrosymmetric materials from first principles
Spin-phonon relaxation times in centrosymmetric materials from first principles
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根据第一原理,中心对称材料中的自旋声子弛豫时间
DOI:
10.1103/physrevb.101.045202
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发表时间:
2020
影响因子:
3.7
通讯作者:
Bernardi, Marco
中科院分区:
文献类型:
--
作者:
Park, Jinsoo;Zhou, Jin-Jian;Bernardi, Marco
We present a first-principles approach for computing the phonon-limitedspin relaxation time due to the Elliott-Yafet mechanism. Our scheme combines fully relativistic spin-flip electron-phonon interactions with an approach to compute the effective spin of band electrons in materials with inversion symmetry. We apply our method to silicon and diamond, for which we compute the temperature dependence of the spin relaxation times and analyze the contributions to spin relaxation from different phonons and valley processes. The computed spin relaxation times in silicon are in excellent agreement with experiment in the 50–300 K temperature range. In diamond, we predict intrinsic spin relaxation times of 540at 77 K and 2.3at 300 K. We show that the spin-flip and momentum relaxation mechanisms are governed by distinct microscopic processes. Our work enables precise predictions of spin-phonon relaxation times in a wide range of materials, providing microscopic insight into spin relaxation and guiding the development of spin-based quantum technologies.
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影响因子:
3.7
作者:
N. H. Long;P. Mavropoulos;S. Heers;B. Zimmermann;D. S. G. Bauer;S. Blügel;Y. Mokrousov
通讯作者:
Y. Mokrousov
影响因子:
3.7
作者:
F. Pientka;M. Gradhand;D.V. Fedorov;I. Mertig;B.L. Györffy
通讯作者:
B.L. Györffy
DOI:
--
发表时间:
2012
期刊:
影响因子:
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作者:
Yang Song;H. Dery
通讯作者:
H. Dery
影响因子:
12.5
作者:
Doherty, M. W.;Meriles, C. A.;Manson, N. B.
通讯作者:
Manson, N. B.
影响因子:
3.7
作者:
Nien-En Lee;Jin-Jian Zhou;Luis A. Agapito;M. Bernardi
通讯作者:
Nien-En Lee;Jin-Jian Zhou;Luis A. Agapito;M. Bernardi