High-performance giant-magnetoresistance junction with B2-disordered Heusler alloy based Co2MnAl/Ag/Co2MnAl trilayer

High-performance giant-magnetoresistance junction with B2-disordered Heusler alloy based Co2MnAl/Ag/Co2MnAl trilayer
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B2无序Heusler合金基Co2MnAl/Ag/Co2MnAl三层高性能巨磁阻结

DOI:
10.1063/1.4927834
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发表时间:
2015-08
影响因子:
3.2
通讯作者:
Chen, Hong
Chen, Hong
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Xia, Jihong;Wang, Guangzhao;Yuan, Hongkuan;Chen, Hong

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通过第一性原理电子结构和弹道输运计算,模拟了具有全Heulser Co2MnAl(CMA)电极和Ag隔离层的电流垂直平面巨磁电阻(MR)器件的输运性质与电极结构无序性的关系。CMA电极在L21型和B2型中的界面粗糙度几乎可以忽略不计。对于不同结构的CMA电极,透过率Tσ(E,k→//)强烈依赖于三层膜的结构。B2基→/Ag/CMA磁性三层膜具有较高的磁化强度平行组态的多数自旋电子电导,磁阻比高达90%以上。相比之下,基于L21的材料具有60%的∼磁共振率,这是由于低得多的体自旋不对称系数(β),这可能是由于邻近界面的每个原子层中的振动自旋极化造成的。
The current-perpendicular-to-plane giant magnetoresistance (MR) devices with full-Heulser Co2MnAl (CMA) electrodes and a Ag spacer have been simulated to investigate the relationship between the transport properties and the structural disordering of electrodes by performing first-principles electronic structure and ballistic transport calculations. The CMA electrode has nearly negligible interfacial roughness in both L21 and B2-types. The transmission coefficient Tσ(E,k→//) is found strongly dependent on the structures of the trilayers for different structural CMA electrodes. High majority-spin electron conductance in the magnetization parallel configuration turns up in the entire k→-plane and the MR ratio reaches as high as over 90% for the B2-based CMA/Ag/CMA magnetic trilayers. In contrast, the L21-based one has ∼60% MR ratio resulting from much lower bulk spin-asymmetry coefficient (β), which might be caused by the vibrational spin-polarization in each atomic layer adjacent to the interfaces in the co...
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