Probing tunneling spin injection into graphene via bias dependence

Probing tunneling spin injection into graphene via bias dependence
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通过偏置依赖性探测石墨烯中的隧道自旋注入

DOI:
10.1103/physrevb.98.054412
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发表时间:
2018
期刊:
影响因子:
3.7
通讯作者:
Kawakami, Roland K.
Kawakami, Roland K.
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Zhu, Tiancong;Singh, Simranjeet;Katoch, Jyoti;Wen, Hua;Belashchenko, Kirill;Žutić, Igor;Kawakami, Roland K.

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系统地研究了石墨烯横向自旋阀中自旋注入的偏压依赖性,以确定影响隧穿自旋注入效率的因素。研究了三种类型的结,包括MgO和六方氮化硼(hBN)隧道势垒和直接接触。直流偏置电流施加到注入器电极诱导一个强大的非线性偏置依赖性的非本地自旋信号的MgO和hBN隧道势垒。此外,对于两种隧道势垒,该信号在负直流偏置下反转其符号。对具有宽范围接触电阻的注入器电极的偏压依赖性的分析表明,符号反转与偏压而不是电流相关。我们考虑了不同的非线性偏置依赖机制,并得出结论,铁磁电极的能量依赖的自旋极化电子结构,而不是电场诱导的自旋漂移效应或自旋过滤效应的隧道势垒,是最有可能的解释实验观察。
The bias dependence of spin injection in graphene lateral spin valves is systematically studied to determine the factors affecting the tunneling spin injection efficiency. Three types of junctions are investigated, including MgO and hexagonal boron nitride (hBN) tunnel barriers and direct contacts. A dc bias current applied to the injector electrode induces a strong nonlinear bias dependence of the nonlocal spin signal for both MgO and hBN tunnel barriers. Furthermore, this signal reverses its sign at a negative dc bias for both kinds of tunnel barriers. The analysis of the bias dependence for injector electrodes with a wide range of contact resistances suggests that the sign reversal correlates with bias voltage rather than current. We consider different mechanisms for nonlinear bias dependence and conclude that the energy-dependent spin-polarized electronic structure of the ferromagnetic electrodes, rather than the electrical field-induced spin drift effect or spin filtering effect of the tunnel barrier, is the most likely explanation of the experimental observations.
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