Silicon on thin BOX: a new paradigm of the CMOSFET for low-power high-performance application featuring wide-range back-bias control
Silicon on thin BOX: a new paradigm of the CMOSFET for low-power high-performance application featuring wide-range back-bias control
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薄 BOX 上硅：用于低功耗高性能应用的 CMOSFET 新范例，具有宽范围反向偏置控制
DOI：
10.1109/iedm.2004.1419245
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
Hideyuki Matsuoka
中科院分区：
文献类型：
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作者：
Ryuta Tsuchiya;M. Horiuchi;Shinichiro Kimura;M. Yamaoka;Takayuki Kawahara;S. Maegawa;T. Ipposhi;Yuzuru Ohji;Hideyuki Matsuoka
我们在超薄盒上展示了一种新的MOSFET，在低功耗和高性能应用中允许宽范围的背偏压控制。背栅不仅有效地提高了有源模式下的驱动电流约20%，而且在待机模式下也有效地降低了关断电流一个数量级。我们还展示了用于金属栅极和离子注入的器件的阈值电压可调技术，以实现V/SUT/TH/控制。通过使用离子注入进行V/SUTH/控制，实现了用于低功率应用的目标V/SUTH/。我们提出了一种6晶体管SRAM存储单元，通过增加反馈机制，我们从新的器件结构中获得了更多的好处。提出的6-Tr SRAM存储单元显著改善了65 nm技术节点的SNM特性，这种效应也适用于更精细的节点。
We demonstrate a new MOSFET on ultra-thin BOX that allows wide-range back-bias control in low-power and high-performance applications. The back gate is effective not only to increase the drive current by about 20% in active mode but also in reduce the off-current by an order of magnitude in stand-by mode. We have also demonstrated tunable-threshold-voltage technology for devices with metal gates and ion implantation for V/sub th/ control. The target V/sub th/ for low-power applications was achieved by using ion implantation for V/sub th/ control. We propose a 6-transistor SRAM memory cell in which we obtain even more benefit from the new device structure by adding a feedback mechanism. A proposed 6-Tr SRAM memory cell is shown to dramatically improve SNM characteristics at the 65-nm technology nodes, and this effect will also apply at finer nodes.
具有埋置背栅的新型绝缘体上硅金属氧化物半导体场效应晶体管
DOI：
--
发表时间：
2004
期刊：
Japanese Journal of Applied Physics Vol.43,No.4B
影响因子：
--
作者：
Toru Hyakutake;et al.;Hyuckjae Oh
通讯作者：
Hyuckjae Oh