Time-Domain Vertical-External-Cavity Semiconductor Laser Simulation

Time-Domain Vertical-External-Cavity Semiconductor Laser Simulation
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时域垂直外腔半导体激光器仿真

DOI:
10.1109/jqe.2007.898833
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发表时间:
2007
影响因子:
2.5
通讯作者:
J. Moloney
J. Moloney
中科院分区:
工程技术3区
文献类型:
--
作者:
M. Kolesik;J. Moloney

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详细介绍了一种垂直外腔半导体激光器(VECSEL)的时域模拟器。该模型的核心采用了数字滤波器的方法来模拟在很宽的频率,温度和载流子密度范围内的主动反射镜的光学特性。该方法也适用于半导体可饱和镜(SESAM)的时域模拟。作为说明,超短脉冲的产生在两种类型的设备中进行了模拟:在同步泵浦的VECSEL和激光器被动锁模SESAM。
A time-domain simulator for vertical external cavity semiconductor lasers (VECSEL) is described in detail. The core of the model employs a digital filter method to model the optical properties of the active mirror over a wide range of frequencies, temperatures, and carrier densities. The method is also applicable without modifications to the time-domain simulation of semiconductor saturable mirrors (SESAM). As an illustration, ultrashort pulse generation is simulated in two kinds of devices: in a synchronously pumped VECSEL and in a laser passively mode-locked by SESAM.
DOI: 10.1063/1.2149371
发表时间: 2005-12
影响因子: 4
作者:
C. Schlichenmaier;A. Thränhardt;T. Meier;S. Koch;W. Chow;J. Hader;J. Moloney
通讯作者: C. Schlichenmaier;A. Thränhardt;T. Meier;S. Koch;W. Chow;J. Hader;J. Moloney