The relation between amorphous structure and explosive crystallization of sputter-deposited amorphous germanium thin films
The relation between amorphous structure and explosive crystallization of sputter-deposited amorphous germanium thin films
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溅射沉积非晶锗薄膜非晶结构与爆炸结晶的关系
DOI：
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发表时间：
2019
影响因子：
1.5
通讯作者：
H. Yasuda
中科院分区：
文献类型：
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作者：
M. Okugawa;R. Nakamura;H. Numakura;A. Heya;N. Matsuo;H. Yasuda
在非晶锗（a-Ge）和非晶硅膜中，已知通过诸如机械刺激、激光照射和电子照射的瞬时过程发生极其快速的结晶，称为爆炸结晶。在本研究中，使用透射电子显微镜，我们研究了电子辐照和闪光灯退火（弗拉）诱导的a-Ge的结晶。我们已经发现，结晶的模式取决于非晶态：爆炸结晶发生在原始的薄膜中的电子辐照和弗拉，而它没有发生在那些在室温下老化超过6个月。在先前的论文[Okugawa等人，J.Appl.Phys.119，214309（2016）]中，报道了通过长期老化在a-Ge膜中形成液体状高密度非晶（HDA）区域。在原始的a-Ge薄膜中观察到的爆炸结晶建议发生通过液体状HDA界面在生长前沿。
In amorphous germanium (a-Ge) and amorphous silicon films, extremely rapid crystallization, called explosive crystallization, is known to occur by instantaneous processes such as mechanical stimulation, laser irradiation, and electron irradiation. In the present study, using transmission electron microscopy, we have investigated crystallization of a-Ge induced by electron irradiation and flash-lamp annealing (FLA). We have found that the mode of crystallization depends on the amorphous state: explosive crystallization occurred by both electron irradiation and FLA in pristine films, while it did not occur in those aged at room temperature for over 6 months. In a previous paper [Okugawa et al., J. Appl. Phys. 119, 214309 (2016)], it was reported that liquid-like high-density amorphous (HDA) regions were formed in a-Ge films by the long-term aging. The explosive crystallization observed in pristine a-Ge films is suggested to occur via liquid-like HDA interfaces at the growth front.
影响因子：
3.7
作者：
Barkalov, O. I.;Tissen, V. G.;Nefedova, M. V.
通讯作者：
Nefedova, M. V.