Hanle effect measurements of spin lifetimes in InAs self-assembled quantum dots
Hanle effect measurements of spin lifetimes in InAs self-assembled quantum dots
复制标题
InAs 自组装量子点自旋寿命的汉勒效应测量
DOI：
10.1063/1.1344565
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发表时间：
2001
影响因子：
4
通讯作者：
D. Awschalom
中科院分区：
文献类型：
--
作者：
R. Epstein;D. Fuchs;W. Schoenfeld;Pierre Petroff;D. Awschalom
InAs 自组装量子点中自旋极化光生载流子的横向自旋寿命是从垂直于自旋的磁场中光致发光的去极化（汉勒效应）中提取的。汉勒对一系列样品的测量表明，点尺寸影响自旋寿命及其对温度的依赖性。与 InAs 润湿层中相比，GaAs 主体中产生的载流子自旋的自旋寿命作为激发强度的函数在性质上是不同的。
Transverse spin lifetimes of spin-polarized photogenerated carriers in InAs self-assembled quantum dots are extracted from the depolarization of their photoluminescence in a magnetic field perpendicular to the spin (the Hanle effect). Hanle measurements on a series of samples reveal that the dot dimensions influence the spin lifetime and its dependence on temperature. The spin lifetime as a function of excitation intensity is qualitatively distinct for carrier spins created in the GaAs host as compared to in the InAs wetting layer.
影响因子：
8.6
作者：
Kikkawa, JM;Awschalom, DD
通讯作者：
Awschalom, DD