X‐Ray Photoelectron Spectroscopy Investigations of the Surface Reaction Layer and its Effects on the Transformation Properties of Nanoscale Ti51Ni38Cu11 Shape Memory Thin Films
X‐Ray Photoelectron Spectroscopy Investigations of the Surface Reaction Layer and its Effects on the Transformation Properties of Nanoscale Ti51Ni38Cu11 Shape Memory Thin Films
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X射线光电子能谱研究表面反应层及其对纳米Ti51Ni38Cu11形状记忆薄膜相变性能的影响
DOI：
10.1002/adem.201400317
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发表时间：
2014
影响因子：
3.6
通讯作者：
A. Ludwig
中科院分区：
文献类型：
--
作者：
D. König;D. Naujoks;T. de los Arcos;S. Grosse-Kreul;A. Ludwig
利用X射线光电子能谱（XPS）表征了不同总膜厚度（400 - 50 nm）的Ti 51 Ni 38 Cu 11薄膜的深度依赖性化学组成。分析了在膜表面上形成的反应层如何显著改变转化相的化学组成，这反过来又导致改变的相变性质。对于较薄的膜，偏离标称化学成分的增加。对于50 nm的膜厚度，观察到10.9 at%的Ti损失。对于不同厚度的膜，Ni含量增加了0.5at%，而Cu含量保持相对恒定。结果总结在一个层模型，支持设计纳米级形状记忆薄膜。
The depth‐dependent chemical constitution of Ti51Ni38Cu11thin films of different total film thickness from 400 to 50 nm was characterized using X‐ray photoelectron spectroscopy (XPS). It was analyzed how reaction layers, which form on the surface of the film significantly change the chemical composition of the transforming phase, which leads in turn to altered phase transformation properties. For thinner films, the deviation from the nominal chemical composition increases. For a film thickness of 50 nm, a Ti loss of ≈9 at% is observed. The Ni content is increased by ≈5 at%, whereas the Cu content stays relatively constant for films of different thickness. The results are summarized in a layer model, which supports designing nanoscale shape memory thin films.
影响因子：
9.4
作者：
D. König;P. J. Buenconsejo;Dario Grochla;S. Hamann;J. Pfetzing‐Micklich;A. Ludwig
通讯作者：
D. König;P. J. Buenconsejo;Dario Grochla;S. Hamann;J. Pfetzing‐Micklich;A. Ludwig
NiTiCu形状记忆薄膜的成分与结构
影响因子：
2.3
作者：
N. Frantz;A. Bosseboeuf;E. Dufour;Valérie Stambouli;G. Nouet;W. Seiler;J. Lebrun
通讯作者：
J. Lebrun
Si(100)基体上梯度Ni-Ti形状记忆合金薄膜生长研究
DOI：
10.1007/s00339-008-4397-2
发表时间：
2008
期刊：
Applied Physics A
影响因子：
--
作者：
R. Martins;N. Schell;A. Mücklich;H. Reuther;M. Beckers;R.J.C. Silva;L. Pereira;F. B. Braz Fernandes
通讯作者：
F. B. Braz Fernandes