Modeling of plasma temperature distribution during micro-EDM for silicon single crystal
Modeling of plasma temperature distribution during micro-EDM for silicon single crystal
复制标题
单晶硅微电火花加工过程中等离子体温度分布的建模
DOI：
10.1007/s00170-020-05135-x
复制
发表时间：
2020-03
期刊：
影响因子：
--
通讯作者：
Lili Han
中科院分区：
文献类型：
--
作者：
Shujuan Li;Xincheng Yin;Zhen Jia;Zhipeng Li;Lili Han
在硅单晶微细电火花加工中，等离子体通道和工件温度场直接影响被加工零件的加工质量。对于硅单晶，单次放电时间短，电极间间隙小，温度不易直接测量。基于能量守恒和热传导理论，结合微细电火花加工过程，对微细电火花加工过程中等离子体进行了热力学分析，建立了考虑熔化潜热的等离子体温度分布模型。采用高斯分布热流边界条件，利用FLUENT软件模拟了工件表面的温度场分布。分析了在不同峰值电流和脉冲宽度条件下，材料去除率（MRR）和表面粗糙度（SR）与温度分布的对应关系。结果表明，等离子体温度与峰值电流和脉冲宽度呈正相关关系。在工艺参数范围内，峰值电流和脉宽的增加导致MRR和SR的增加，实验结果验证了模型的正确性。
In silicon single crystal micro-electrical discharge machining (Micro-EDM), the plasma channel and workpiece temperature field directly affect the machined parts. For Si single crystal, with short single discharge time and small inter-electrode gap, the temperature cannot be easily measured directly. Based on the theory of energy conservation and heat conduction, combined with Micro-EDM process, in this paper, thermodynamic analysis of plasma in Micro-EDM process is conducted, and a plasma temperature distribution model considering latent heat of fusion is established. Adopting Gaussian distribution heat flux boundary condition and the temperature field distribution of the workpiece surface is simulated by FLUENT. The relationship between material removal rate (MRR) and surface roughness (SR) corresponding to temperature distribution under different peak current and pulse width conditions is analyzed. The results show that plasma temperature has a positive correlation with peak current and pulse width. The increase of peak current and pulse width within the processing parameter range leads to the increase of MRR and SR. The experimental results verify the correctness of the model.
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DOI：
10.1115/1.4026298
发表时间：
2014-06
影响因子：
4
作者：
Soham Mujumdar;D. Curreli;S. Kapoor;D. Ruzic
通讯作者：
Soham Mujumdar;D. Curreli;S. Kapoor;D. Ruzic
影响因子：
1.8
作者：
E. Yamasue;M. Susa;H. Fukuyama;K. Nagata
通讯作者：
E. Yamasue;M. Susa;H. Fukuyama;K. Nagata
影响因子：
3.2
作者：
J. A. Rich
通讯作者：
J. A. Rich
影响因子：
1.4
作者：
K. Saxena;S. Agarwal;R. Das
通讯作者：
K. Saxena;S. Agarwal;R. Das
影响因子：
3.2
作者：
DIBITONTO, DD;EUBANK, PT;BARRUFET, MA
通讯作者：
BARRUFET, MA