Effects of Ga substitution in Ce:Tb3GaxAl5−xO12 single crystals for scintillator applications
Effects of Ga substitution in Ce:Tb3GaxAl5−xO12 single crystals for scintillator applications
复制标题
Ce:Tb3GaxAl5−xO12 单晶中 Ga 取代对闪烁体应用的影响
DOI：
10.7567/jjap.57.02cb02
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发表时间：
2018
影响因子：
1.5
通讯作者：
T. Yanagida
中科院分区：
文献类型：
--
作者：
D. Nakauchi;G. Okada;N. Kawano;N. Kawaguchi;T. Yanagida
采用浮区法成功合成了ce掺杂Tb3GaxAl5−xO12 （x = 0-4）的块状单晶。由于Ce3+的5d-4f跃迁峰在550 nm左右，样品表现出强烈的宽发射光致发光和闪烁，同时由于Tb3+的4f-4f跃迁峰也表现出一些尖锐的峰。137Cs γ射线辐照下的脉冲高度谱测量显示出一个清晰的光吸收峰，其中闪烁光产额估计为57,000 (x = 0), 28,000 (x = 1), 19,000 （x = 2）和10,000 （x = 3）光子/MeV。适当添加Ga可以抑制余辉水平，其中最佳浓度为x = 2，余辉水平为23 ppm。
Bulk single crystals of Ce-doped Tb3GaxAl5−xO12 (x = 0–4) were successfully synthesized by the floating zone method. The samples exhibit photoluminescence and scintillation with an intense broad emission due to the 5d–4f transitions of Ce3+ peaking around 550 nm as well as a few sharp peaks due to the 4f–4f transitions of Tb3+. Pulse height spectrum measurements under 137Cs γ-ray irradiation demonstrated a clear photoabsorption peak, in which the scintillation light yields were estimated to be 57,000 (x = 0), 28,000 (x = 1), 19,000 (x = 2), and 10,000 (x = 3) photons/MeV. Afterglow level can be suppressed with an appropriate addition of Ga, in which the optimum concertation is x = 2 leading an afterglow level of 23 ppm.
影响因子：
1.8
作者：
T. Yanagida;A. Yoshikawa;Y. Yokota;K. Kamada;Y. Usuki;S. Yamamoto;M. Miyake;M. Baba;Kazuaki Kumagai;Katsuhisa Sasaki;Masatoshi Ito;Naoto Abe;Y. Fujimoto;S. Maeo;Y. Furuya;Hidehiko Tanaka;A. Fukabori;Targino Rodrigues dos Santos;M. Takeda;N. Ohuchi
通讯作者：
T. Yanagida;A. Yoshikawa;Y. Yokota;K. Kamada;Y. Usuki;S. Yamamoto;M. Miyake;M. Baba;Kazuaki Kumagai;Katsuhisa Sasaki;Masatoshi Ito;Naoto Abe;Y. Fujimoto;S. Maeo;Y. Furuya;Hidehiko Tanaka;A. Fukabori;Targino Rodrigues dos Santos;M. Takeda;N. Ohuchi
使用与硅条探测器耦合的闪烁体开发新型一维 γ 射线位置传感器
DOI：
--
发表时间：
2006
期刊：
IEEE Transactions on Nuclear Science 53
影响因子：
--
作者：
Itoh;T.; Koubun;M.; Takashima;T.; Honda;T.; Makishima;K.; Tanaka;T.; Yanagida;T.; Hirakuri;S.; Miyawaki;R.; Takahashi;H.; Nakazawa;K.; Takahashi;T.
通讯作者：
T.