New CdTe Pixel Gamma-Ray Detector with Pixelated Al Schottky Anodes
New CdTe Pixel Gamma-Ray Detector with Pixelated Al Schottky Anodes
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具有像素化铝肖特基阳极的新型 CdTe 像素伽马射线探测器
DOI：
10.1143/jjap.46.6043
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发表时间：
2007
影响因子：
1.5
通讯作者：
Sakari Kaneku
中科院分区：
文献类型：
--
作者：
S. Watanabe;S. Ishikawa;S. Takeda;H. Odaka;Takaaki Tanaka;Tadayuki Takahashi;K. Nakazawa;M. Yamazato;A. Higa;Sakari Kaneku
我们研制了一种新型的铝肖特基碲化镉像素探测器，并对其光谱性能进行了测试。它有像素化的阳极由铝和一个共同的阴极由铂制成。由于肖特基二极管特性和阳极像素结构导致的低漏电流和高偏置电压，实现了包括高能量分辨率的良好光谱性能。当厚度为0.75 mm的像素探测器在400 V偏压下工作于-20 °C时，在59.5 keV和122 keV处分别获得了1.1和1.8 keV的半高宽（FWHM）能量分辨率。在相同的操作条件下，用Al肖特基CdTe像素检测器获得的光谱性能超过了用常规In肖特基CdTe像素检测器获得的光谱性能，所述常规In肖特基CdTe像素检测器具有In共阳极和Pt像素化阴极。
We developed a new Al Schottky CdTe pixel detector and measured its spectral performance. It has pixelated anodes made of aluminum and a common cathode made of platinum. Because of the low leakage current and the high bias voltage owing to the Schottky diode characteristic and the anode pixel configuration, a good spectral performance including a high energy resolution was achieved. When the pixel detector with a thickness of 0.75 mm was subjected to a bias voltage of 400 V and was operated at -20 °C, the full-width-half-maximum (FWHM) energy resolution of 1.1 and 1.8 keV at 59.5 and 122 keV, respectively, were successfully obtained. The spectral performance obtained with the Al Schottky CdTe pixel detector exceeded that obtained with the conventional In Schottky CdTe pixel detector, which has an In common anode and Pt pixelated cathodes, under the same operating conditions.
Si/CdTe 半导体康普顿望远镜的最新结果
DOI：
--
发表时间：
2006
期刊：
Nuclear Instruments and Methods A 568
影响因子：
--
作者：
Tanaka;Watanabe;et al.
通讯作者：
et al.
原型 Si/CdTe 康普顿相机和偏振测量
DOI：
--
发表时间：
2004
期刊：
IEEE Trans.Nucl.Sci Vol.51 No.5I
影响因子：
--
作者：
T.Mitani;T.Takahashi;et al.
通讯作者：
et al.
影响因子：
1.8
作者：
Takahashi, T;Watanabe, S
通讯作者：
Watanabe, S