An ambipolar transistor based on a monolayer WS2 using lithium ions injection
An ambipolar transistor based on a monolayer WS2 using lithium ions injection
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采用锂离子注入的基于单层 WS2 的双极晶体管
DOI：
10.1088/2053-1591/aba395
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发表时间：
2020
影响因子：
2.3
通讯作者：
J. Dai
中科院分区：
文献类型：
--
作者：
Heshen Wang;Qiye Liu;Xuemeng Feng;Zhan Zhang;Kai Wang;Zhaojun Liu;J. Dai
基于二维(2D)材料的双极场效应晶体管(FET)器件因其在集成电路、柔性电子学和光学传感器等领域的潜在应用而备受关注。然而，使用传统的SiO_2作为介质层，很难调节导带和价带之间的费米能级。这里，我们采用锂离子导电微晶玻璃(LICGC)作为单层WS2FET的背栅电极。界面Li+离子的有效积累和耗散通过电子和空穴掺杂在导电沟道中引起费米能级的宽调，表现出双极输运特性，阈值电压分别为0.9V和−1.3V。我们的结果为基于2D材料的超薄双极场效应晶体管的制备提供了机会。
Ambipolar field-effect transistor (FET) devices based on two-dimensional (2D) materials have been attracted much attention due to potential applications in integrated circuits, flexible electronics and optical sensors. However, it is difficult to tune Fermi level between conduction and valence bands using a traditional SiO2 as dielectric layer. Here, we employed the lithium-ion conductive glass ceramic (LICGC) as the back-gate electrode in a monolayer WS2 FET. The effective accumulation and dissipation of Li+ ions in the interface induce a wide tune of Fermi level in the conducting channel by electron and hole doping, which show an ambipolar transport characteristics with threshold voltages at 0.9 V and −1.3 V, respectively. Our results provide an opportunity for fabricating ultra-thin ambipolar FET based on 2D materials.
影响因子：
10.8
作者：
Sahu, Ayaskanta;Kang, Moon Sung;Norris, David J.
通讯作者：
Norris, David J.