HEMT GaAs/GaN power amplifiers architecture with discrete dynamic voltage bias control in envelope tracking RF transmitter for W-CDMA signals
HEMT GaAs/GaN power amplifiers architecture with discrete dynamic voltage bias control in envelope tracking RF transmitter for W-CDMA signals
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HEMT GaAs/GaN 功率放大器架构，在 W-CDMA 信号的包络跟踪射频发射器中具有离散动态电压偏置控制
DOI：
10.1109/pawr.2011.5725384
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
G. Manes
中科院分区：
文献类型：
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作者：
M. Mercanti;A. Cidronali;S. Maurri;G. Manes
提出了一种基于组合2-PAS结构的平均效率提高的新方法。它使用离散功率控制和动态电源电压，从而在低功率水平下提高效率。它使包络跟踪射频发射机具有比经典方法更高的平均效率。在2.14 GHz连续波下，我们得到了42.5%的平均效率，比等峰值Pout=35 dBm的经典方法提高了6.1%。功率回退16.4分贝时，PAE的最大增量为13.3%。
A new approach to the average efficiency improvement based on a combined 2-PAs architecture is presented. It uses discrete power control and dynamic supply voltage, which allows enhanced efficiency at low power level. It enables envelope tracking RF transmitter with higher average efficiency than classical approach. At 2.14 GHz CW we got an average efficiency of 42.5%, 6.1% better than the classical approach with equal peak Pout = 35 dBm. The peak increment of PAE is 13.3% at 16.4 dB of power back-off.
DOI：
10.1109/pawr.2011.5725378
发表时间：
2011-03
期刊：
2011 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications
影响因子：
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作者：
Konstantinos Mimis;Kevin A Morris;Joe McGeehan
通讯作者：
Konstantinos Mimis;Kevin A Morris;Joe McGeehan