A Novel Technique to Investigate the Role of Traps in the Off‐State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias
A Novel Technique to Investigate the Role of Traps in the Off‐State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias
复制标题
使用衬底偏置研究陷阱在 Si 上 AlGaN/GaN 高电子迁移率晶体管断态性能中的作用的新技术
DOI：
10.1002/pssa.201900794
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
D. Nath
中科院分区：
文献类型：
--
作者：
N. Remesh;Sandeep Kumar;I. Guiney;C. Humphreys;S. Raghavan;R. Muralidharan;D. Nath
利用一种新的表征技术对氮化镓缓冲陷阱介导的泄漏进行了识别和研究。通过反向测量，缓冲阱状态对侧漏的影响是通过探测台面隔离欧姆垫来确定的。时间相关的泄漏测量是为了研究由于陷阱造成的缓冲泄漏增加的程度。观察到，在非常慢的扫描速率和高衬底偏压下，台面泄漏更为突出。温度相关的测量结果表明，阱的激活势垒分别为0.34 eV和0.2 eV，其表面泄漏和衬底泄漏的特征是热离子发射。
Leakage mediated by GaN buffer traps is identified and studied using a novel characterization technique. Through back‐gating measurement, the effect of buffer trap states on the lateral leakage is determined by probing mesa‐isolated Ohmic pads. Time‐dependent leakage measurements are carried out to study the extent of the increase in buffer leakage due to the traps. It is observed that the mesa leakage is more prominent at very slow sweep rates and high substrate bias. The temperature‐dependent measurements show that the mesa leakage and the substrate leakage are characterized by thermionic emission from the traps with an activation barrier of 0.34 and 0.2 eV, respectively.
影响因子：
4
作者：
Uren, Michael J.;Caesar, Markus;Kuball, Martin
通讯作者：
Kuball, Martin