Pattern-generation and pattern-transfer for single-digit nano devices
Pattern-generation and pattern-transfer for single-digit nano devices
复制标题
单位数纳米器件的图案生成和图案转移
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
D. Olynick
中科院分区：
文献类型：
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作者：
I. Rangelow;Ahmad Ahmad;T. Ivanov;M. Kaestner;Y. Krivoshapkina;T. Angelov;S. Lenk;C. Lenk;V. Ishchuk;M. Hofmann;D. Nechepurenko;I. Atanasov;B. Volland;E. Guliyev;Z. Durrani;Mervyn E. Jones;Chen Wang;Dixi Liu;A. Reum;M. Holz;N. Nikolov;W. Majstrzyk;T. Gotszalk;D. Staaks;Stefano Dallorto;D. Olynick
在室温下操作的单电子器件需要具有可比尺寸的隧道结的亚5 nm量子点。纳米电子学的进一步发展取决于产生介观结构的能力，以及在单个系统中将这些介观结构与互补金属氧化物半导体器件连接的能力。作者采用了两种新的方法相结合的制造室温硅单电子晶体管（SET），福勒-诺德海姆扫描探针光刻（F-N SPL）与有源悬臂梁和低温反应离子蚀刻，然后图案依赖性氧化。F-N SPL采用5-10 nm厚的高分辨率分子抗蚀剂（杯芳烃）的低能量电子曝光，导致单个纳米数光刻性能[Rangelow等人，Proc. SPIE 7637，76370V（2010）]。由于极低的抗蚀剂厚度限制了蚀刻深度，因此将图案转移到硅中的后续步骤变得非常具有挑战性。作者开发了一个计算机模拟代码来模拟低温（−120 °C）下的反应离子蚀刻。在这篇文章中，作者介绍了所有这些技术的联盟，用于制造能够在室温下工作的SET。
Single-electron devices operating at room temperature require sub-5 nm quantum dots having tunnel junctions of comparable dimensions. Further development in nanoelectronics depends on the capability to generate mesoscopic structures and interfacing these with complementary metal–oxide–semiconductor devices in a single system. The authors employ a combination of two novel methods of fabricating room temperature silicon single-electron transistors (SETs), Fowler–Nordheim scanning probe lithography (F-N SPL) with active cantilevers and cryogenic reactive ion etching followed by pattern-dependent oxidation. The F-N SPL employs a low energy electron exposure of 5–10 nm thick high-resolution molecular resist (Calixarene) resulting in single nanodigit lithographic performance [Rangelow et al., Proc. SPIE 7637, 76370V (2010)]. The followed step of pattern transfer into silicon becomes very challenging because of the extremely low resist thickness, which limits the etching depth. The authors developed a computer simulation code to simulate the reactive ion etching at cryogenic temperatures (−120 °C). In this article, the authors present the alliance of all these technologies used for the manufacturing of SETs capable to operate at room temperatures.
纳米结构制造中的扫描探针
DOI：
10.1116/1.4897500
发表时间：
2014
期刊：
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
影响因子：
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作者：
I.W. Rangelow;M. Kästner;Tzv. Ivanov;M. Hofer;A. Ahmad;E. Guliyev;T. Angelov;A. Reum;S. Lenk;A. Schuh;Y. Krivoshapkina;M. Budden;J.-P. Zöllner;N. Nikolov;M. Holz
通讯作者：
M. Holz