Channel strain analysis in high-performance damascene-gate p-metal-oxide-semiconductor field effect transistors using high-spatial resolution Raman spectroscopy
Channel strain analysis in high-performance damascene-gate p-metal-oxide-semiconductor field effect transistors using high-spatial resolution Raman spectroscopy
复制标题
使用高空间分辨率拉曼光谱对高性能镶嵌栅极 p 金属氧化物半导体场效应晶体管进行沟道应变分析
DOI：
10.1063/1.3436598
复制
发表时间：
2010
影响因子：
3.2
通讯作者：
A. Ogura
中科院分区：
文献类型：
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作者：
M. Takei;D. Kosemura;K. Nagata;H. Akamatsu;S. Mayuzumi;S. Yamakawa;H. Wakabayashi;A. Ogura
采用紫外激光（λ=363.8 nm）和准线激发源的显微拉曼光谱技术，研究了去除伪栅后，压应力衬里和SiGe埋层的p型金属氧化物半导体场效应晶体管（pMOSFET）的沟道应变. 利用准线激发源，我们在一维应变剖面中同时获得了高空间分辨率的空间和能量信息。对于Lgate>210 nm的样品，我们进行激光曝光10 min以测量沟道应变。 然而，由于空间分辨率的限制，Lgate<210 nm样品的沟道应变无法评估。 因此，对于Lgate<210 nm的样品，我们将激光暴露时间增加至40 min。 单色器中安装了具有极低热系数的超级因瓦金属，从而实现了非常长的测量。最后，我们在Lgate=30 nm的样品的沟道中发现了-2.4 GPa的极大应力。 这些结果显示…
Channel strain analysis in damascene-gate p-metal-oxide-semiconductor field effect transistors (pMOSFETs) with a compressive stress liner and embedded SiGe after the dummy gate removal was studied using micro-Raman spectroscopy with a UV laser (λ=363.8 nm) and a quasiline excitation source. Using a quasiline excitation source, we obtained spatial and energy information simultaneously with a high spatial resolution in the one-dimensional strain profile. For Lgate>210 nm samples, we performed laser exposure for 10 min to measure the channel strain. However, the channel strain for Lgate<210 nm samples was impossible to evaluate due to the limitation of the spatial resolution. Therefore, we increased the laser exposure time to 40 min for Lgate<210 nm samples. Super invar metal with an extremely low thermal coefficient was installed in the monochromator, which achieved a very long measurement. Finally, we found an extremely large stress of −2.4 GPa in the channel of Lgate=30 nm samples. These results demonstra...
影响因子：
3.2
作者：
S. Takagi;J. Hoyt;J. Welser;J. Gibbons
通讯作者：
S. Takagi;J. Hoyt;J. Welser;J. Gibbons
高性能金属氧化物半导体场效应晶体管的应变表征
DOI：
--
发表时间：
2008
期刊：
Jpn. J. Appl. Phys. 47
影响因子：
--
作者：
Disuke Kosemura;Atsushi Ogurat
通讯作者：
Atsushi Ogurat