Fabrication of Weak C-Axis Preferred AlN Thin Film for Temperature Measurement.
Fabrication of Weak C-Axis Preferred AlN Thin Film for Temperature Measurement.
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用于温度测量的弱 C 轴优选 AlN 薄膜的制备
DOI：
10.3390/s21165345
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发表时间：
2021-08-08
期刊：
影响因子：
--
通讯作者：
Zhang W
中科院分区：
文献类型：
--
作者：
Dong L;Li Y;Lv J;Jiang H;Zhang W
制备了一种具有缺陷的弱C轴择优取向AlN薄膜用于温度测量。结果表明，薄膜的（002）衍射峰随退火温度和退火时间的增加而单调增加。这种现象归因于AlN薄膜晶格中缺陷的演化。因此，缺陷与退火的关系可以用（002）衍射峰的偏移量来表示，可用于温度测量。建立了基于点阵参数（2θ）、退火温度和退火时间的温度解释算法方程，并利用MATLAB编制了温度解释软件。该软件实现了温度的可视化判读，相对误差小于7%。该研究对促进高温构件表面温度的准确测量具有重要意义。
A weak C-axis preferred AlN thin film with a lot of defects was fabricated for temperature measurement. It was found that the (002) diffraction peak of the thin film increased monotonously with the increase in annealing temperature and annealing time. This phenomenon is ascribed to the evolution of defects in the lattice of the AlN film. Therefore, the relationship between defects and annealing can be expressed by the offset of (002) diffraction peak, which can be used for temperature measurement. Furthermore, a temperature interpretation algorithm Equation based on the lattice parameter (2θ), annealing temperature and annealing time was established, and a temperature interpretation software was built with MATLAB. Visual temperature interpretation is realized by the software, and the relative error is less than 7%. This study is of great significance for promoting the accurate temperature measurement on the surface of high temperature component.
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影响因子：
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