CrAs(001)/AlAs(001) heterogeneous junction as a spin current diode predicted by first-principles calculations

CrAs(001)/AlAs(001) heterogeneous junction as a spin current diode predicted by first-principles calculations
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第一性原理计算预测 CrAs(001)/AlAs(001) 异质结作为自旋电流二极管

DOI:
10.1016/j.jmmm.2008.09.009
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发表时间:
2009-02
影响因子:
2.7
通讯作者:
--
中科院分区:
材料科学3区
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--
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我们用第一性原理计算了CrAs(001)/AlAs(001)异质结中与自旋相关的量子输运,并预言了电荷和自旋电流的强二极管效应。当偏置电压同时施加到CRAS和ALAS的端子时,少数自旋电流被完全抑制。当施加偏置电压到CRAS端子时,大部分自旋电流被抑制,而当施加偏置电压到AlAs端子时,大部分自旋电流被“松弛”。电荷和自旋电流二极管在自旋电子学领域的可编程逻辑应用中具有广阔的应用前景。
We report on first-principles calculations of spin-dependent quantum transport in a CrAs(001)/AlAs(001) heterogeneous junction and predict a strong diode effect of charge and spin current. The minority spin current is absolutely inhibited when the bias voltage is applied to the terminals of both CrAs and AlAs. The majority spin current is inhibited when the bias voltage is applied to the terminal of CrAs and “relaxed” when the bias voltage is applied to the terminal of AlAs. The charge and spin current diode are promising for reprogrammable logic applications in the field of spintronics.
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