Annealing effect on the electron spin dynamics in heavily Mn-doped (Ga,Mn)As

Annealing effect on the electron spin dynamics in heavily Mn-doped (Ga,Mn)As
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退火对重Mn掺杂(Ga,Mn)As电子自旋动力学的影响

DOI:
10.3938/jkps.64.1504
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发表时间:
2010-12
影响因子:
0.6
通讯作者:
Zhang, Xinhui
Zhang, Xinhui
中科院分区:
物理与天体物理4区
文献类型:
--
作者:
Chen, Lin;Gao, Haixia;Zhao, Jianhua;Zhang, Xinhui

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采用时间分辨磁光克尔效应(TR-MOKE)测量方法,研究了重掺杂(Ga,Mn)As样品经适当退火处理后,电子自旋退相过程随温度和光激发密度的变化.与生长态的(Ga,Mn)As不同,退火后Mn离子引起的交换散射被有效抑制,而(Ga,Mn)As的s-d散射在低温下对自旋退相起主导作用。对于退火的(Ga,Mn)As,p-d交换耦合被证明是重要的电子自旋退相过程。此外,库仑散射所产生的弱局域化的空穴和Mn杂质被揭示在退火后的电子自旋退相中起着重要的作用。我们的研究结果表明,杂质诱导的无序在电子自旋退相过程中起着重要的作用,在(Ga,Mn)As中,当Mn过掺杂高达15%,这是一个关键的问题,需要考虑获得高品质的(Ga,Mn)As薄膜具有更高的居里温度TC和更好的功能。
A temperature- and photo-excitation-density-dependent electron spin dephasing process has been studied by time-resolved magneto-optical Kerr effect (TR-MOKE) measurements for heavily-doped (Ga,Mn)As after appropriate annealing treatment. Unlike the as-grown (Ga,Mn)As in which s-d scattering is dominant for spin dephasing at low temperature, the exchange scattering induced by Mn ions is efficiently suppressed after annealing. For annealed (Ga,Mn)As, the p-d exchange coupling proves to be important for the electron spin dephasing process. Moreover, the Coulomb scattering arising from the weakly-localized holes and Mn impurities is revealed to play an important role in the electron spin dephasing after annealing. Our results demonstrate that the impurityinduced disorder plays a significant role in the electron spin-dephasing process in (Ga,Mn)As when Mn is over doped by as much as 15%, which is a critical issue that needs to be considered to achieve high-quality (Ga,Mn)As thin films with a higher Curie temperature TC and better functionality.
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