The improved synthesis quality of crystalline Lu2Ti2O7 thin film by designing the calcinations modes
The improved synthesis quality of crystalline Lu2Ti2O7 thin film by designing the calcinations modes
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通过设计煅烧方式提高结晶Lu2Ti2O7薄膜的合成质量
DOI：
10.1016/j.matlet.2012.12.029
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发表时间：
2013-03
影响因子：
3
通讯作者：
Zhang, Nai-qiang
中科院分区：
文献类型：
--
作者：
Li, Bao-rang;Chen, Lei;Li, Zuo-dong;Zhang, Nai-qiang
本文首次尝试用溶胶-凝胶法制备Lu_2Ti_2O_7薄膜。研究表明，以Si为衬底，即使煅烧温度提高到1050°C，也不能合成纯的Lu 2 Ti 2 O 7薄膜。相应的AFM分析表明，样品的表面粗糙度很大，高达10.073nm。通过对煅烧方式的设计，在600°C的低温下，以玻璃为衬底，成功地制备了纯Lu 2 Ti 2 O 7薄膜。表面粗糙度降低到2.6573nm。进一步的研究表明，表面粗糙度、结晶度以及热处理产生的残余应力对电性能有很大影响。
Preparation of Lu2Ti2O7thin film has been tried by sol–gel technique for the first time in this paper. The investigations reveal that pure Lu2Ti2O7thin film cannot be synthesized even if the calcinations temperature is increased to 1050°C when Si is chosen as substrate. The corresponding AFM analysis shows that the surface rough of sample is very large, which is as high as 10.073nm. By designing the calcinations modes, a pure Lu2Ti2O7thin film is prepared successfully at temperature as low as 600°C with glass as substrate. Meanwhile the surface rough is lowered to be 2.6573nm. Further studies suggest that the electric property is affected greatly by the surface roughness, degree of crystallization and residual stress produced due to the heat-treatment.
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影响因子：
2.1
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影响因子：
2.1
作者：
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通讯作者：
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影响因子：
3
作者：
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影响因子：
3.7
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