Pump dependent carrier lifetimes in InAs/GaAs quantum dot photoconductive terahertz antenna structures
Pump dependent carrier lifetimes in InAs/GaAs quantum dot photoconductive terahertz antenna structures
复制标题
InAs/GaAs 量子点光电导太赫兹天线结构中泵浦相关的载流子寿命
DOI:
10.1063/1.5083798
复制
发表时间:
2019
影响因子:
3.2
通讯作者:
E. Rafailov
中科院分区:
文献类型:
--
作者:
Andrei Gorodetsky;N. Bazieva;E. Rafailov
In this paper, we study the behavior of photoexcited carriers in GaAs wafers containing self-assembled InAs quantum dots (QDs). These samples were designed and grown to be employed as photoconductive antennae for terahertz (THz) generation. The implanted QDs serve to shorten the overall carrier lifetime and enable pumping with lasers operating at wavelengths between 1 μ m and 1.3 μ m. Optical pump-THz probe measurements reveal carrier lifetime shortening for higher pump powers in the unbiased antennae due to increased carrier capture via Auger relaxation. This phenomenon significantly broadens the THz spectra from QD-based PCAs and explains the increased THz intensity at higher frequencies presented earlier.
影响因子:
4
作者:
M. Lumb;E. Clarke;E. Harbord;P. Spencer;R. Murray;F. Masia;P. Borri;W. Langbein;C. Leburn;C. Jappy;N. K. Metzger;C. Brown;W. Sibbett
通讯作者:
M. Lumb;E. Clarke;E. Harbord;P. Spencer;R. Murray;F. Masia;P. Borri;W. Langbein;C. Leburn;C. Jappy;N. K. Metzger;C. Brown;W. Sibbett
影响因子:
41.2
作者:
E. Zibik;E. Zibik;Thomas Grange;Thomas Grange;B. A. Carpenter;N. E. Porter;R. Ferreira;G. Bastard;D. Stehr;S. Winnerl;Manfred Helm;Huiyun Liu;Huiyun Liu;M. S. Skolnick;L. R. Wilson
通讯作者:
E. Zibik;E. Zibik;Thomas Grange;Thomas Grange;B. A. Carpenter;N. E. Porter;R. Ferreira;G. Bastard;D. Stehr;S. Winnerl;Manfred Helm;Huiyun Liu;Huiyun Liu;M. S. Skolnick;L. R. Wilson
DOI:
10.1109/jstqe.2016.2633870
发表时间:
2017-07-01
影响因子:
4.9
作者:
Fedorova, Ksenia A.;Gorodetsky, Andrei;Rafailov, Edik U.
通讯作者:
Rafailov, Edik U.