Industrial-University Cooperative Research Activity: Uniaxial Stress-Deep Level Transient Spectroscopy Studies ofDefects in Semiconductors (Materials Research)

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It is the purpose of this research to determine defect symmetry information, from an experiment observing the uniaxial stress splitting for stresses applied along different crystallographic directions. Researchers will investigate defects in irradiated silicon for which stress EPR or optical experiments have been performed. The energy levels of a number of neutron-produced defects of this type will be determined and correlated with known EPR defect structures. This DLTS stress work will be extended to other materials which contain a wealth of interesting defects for which often no symmetry information exists. There are many native defects in GaAs in addition to irradiation-induced defects. A careful study of the properties of defects under stress in this material will be extremely useful, even in those cases where the specific chemical nature of the defect cannot be discerned.