Industrial-University Cooperative Research Activity: Uniaxial Stress-Deep Level Transient Spectroscopy Studies ofDefects in Semiconductors (Materials Research)

产学合作研究活动：半导体缺陷的单轴应力-深能级瞬态光谱研究（材料研究）

• 批准号: 8504719
• 负责人: John Farmer
• 金额: $ 20.43万
• 依托单位: University of Missouri-Columbia
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1985
• 资助国家: 美国
• 起止时间: 1985-08-01 至 1989-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8504719&HistoricalAwards=false
• 关键词: Industrial; University; Cooperative; Research; Activity

It is the purpose of this research to determine defect symmetry information, from an experiment observing the uniaxial stress splitting for stresses applied along different crystallographic directions. Researchers will investigate defects in irradiated silicon for which stress EPR or optical experiments have been performed. The energy levels of a number of neutron-produced defects of this type will be determined and correlated with known EPR defect structures. This DLTS stress work will be extended to other materials which contain a wealth of interesting defects for which often no symmetry information exists. There are many native defects in GaAs in addition to irradiation-induced defects. A careful study of the properties of defects under stress in this material will be extremely useful, even in those cases where the specific chemical nature of the defect cannot be discerned.

本研究的目的是确定缺陷的对称性 信息，从观察单轴应力分裂的实验 对于沿沿着不同结晶方向施加的应力。 研究人员将调查辐照硅中的缺陷， 已经进行了应力EPR或光学实验。 能量 这种类型的许多中子产生的缺陷的水平将是 确定并与已知的EPR缺陷结构相关。 此DLTS 应力工作将扩展到其他材料，其中含有丰富的 有趣的缺陷，通常不存在对称信息。 在GaAs中存在许多本征缺陷， 辐照引起的缺陷。 仔细研究了 这种材料在应力下的缺陷将是非常有用的，即使在 这些情况下，缺陷的具体化学性质不能被 被发现的