Research Initiation: Study of Deep Impurity Levels in Thermally and Pulsed-Laser Annealed GaAs

采用深能级瞬态光谱（deep level transient spectroscopy, dts）和其他相关的电学和光学测量方法，研究了热退火、瞬态退火和脉冲激光退火、n型离子注入的cr掺杂和未掺杂半绝缘GaAs样品。研究了轻、重掺杂Si和Se的砷化镓样品。在退火炉中进行无盖热退火，封装样品采用瞬态退火（1 - 10秒），激光退火采用染料和XeCl准分子激光器。深层能级分布将通过DLTS和C-V测量来研究，以确定杂质和缺陷在热处理过程中的重新分布。

Thermal annealed, transient annealed, and pulsed laser annealed, n-type ion implanted samples of Cr-doped and undoped semi-insulated GaAs will be investigated by the method of deep level transient spectroscopy (DLTS) and other relevant electrical and optical measurements. GaAs samples with light and heavy doping of Si and Se will be examined. Capless thermal annealing will be performed in the annealing furnace, transient annealing (1 - 10 sec) will be employed for the encapsulated samples, and laser annealing will be done by using dye and XeCl excimer laser. Profiles of deep energy levels will be studied by DLTS and C-V measurements to determine the redistribution of impurities and defects during the thermal treatment.