Research Initiation: Study of Deep Impurity Levels in Thermally and Pulsed-Laser Annealed GaAs

研究启动：热退火和脉冲激光退火 GaAs 中深层杂质水平的研究

• 批准号: 8505161
• 负责人: Andrew Rys
• 金额: $ 7万
• 依托单位: Kansas State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1985
• 资助国家: 美国
• 起止时间: 1985-05-01 至 1988-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8505161&HistoricalAwards=false
• 关键词: Research; Initiation; Study; Deep; Impurity

Thermal annealed, transient annealed, and pulsed laser annealed, n-type ion implanted samples of Cr-doped and undoped semi-insulated GaAs will be investigated by the method of deep level transient spectroscopy (DLTS) and other relevant electrical and optical measurements. GaAs samples with light and heavy doping of Si and Se will be examined. Capless thermal annealing will be performed in the annealing furnace, transient annealing (1 - 10 sec) will be employed for the encapsulated samples, and laser annealing will be done by using dye and XeCl excimer laser. Profiles of deep energy levels will be studied by DLTS and C-V measurements to determine the redistribution of impurities and defects during the thermal treatment.

热退火、瞬态退火和脉冲激光退火，n型 Cr掺杂和未掺杂半绝缘GaAs的离子注入样品将 用深能级瞬态谱方法研究 （DLTS）和其他相关的电学和光学测量。 GaAs 将检查具有Si和Se的轻掺杂和重掺杂的样品。 在退火炉中进行无帽热退火， 将对包封的膜采用瞬时退火（1 - 10秒 样品，并将通过使用染料和XeCl准分子进行激光退火 激光器 用DLTS和C-V方法研究了深能级的分布 测量以确定杂质和缺陷的再分布 在热处理期间。