Research Initiation: Study of Deep Impurity Levels in Thermally and Pulsed-Laser Annealed GaAs

用深能级瞬变谱(DLTS)和其他相关的电学和光学测量方法研究了热退火、瞬时退火和脉冲激光退火n型离子注入的掺铬和非掺杂半绝缘砷化镓样品。轻掺和重掺Si和Se的砷化镓样品将被检验。在退火炉中进行无色热退火，对封装后的样品进行瞬时(1-10秒)退火，用染料和XeCl准分子激光进行激光退火。深能级的分布将通过DLTS和C-V测量来研究，以确定在热处理过程中杂质和缺陷的再分布。

Thermal annealed, transient annealed, and pulsed laser annealed, n-type ion implanted samples of Cr-doped and undoped semi-insulated GaAs will be investigated by the method of deep level transient spectroscopy (DLTS) and other relevant electrical and optical measurements. GaAs samples with light and heavy doping of Si and Se will be examined. Capless thermal annealing will be performed in the annealing furnace, transient annealing (1 - 10 sec) will be employed for the encapsulated samples, and laser annealing will be done by using dye and XeCl excimer laser. Profiles of deep energy levels will be studied by DLTS and C-V measurements to determine the redistribution of impurities and defects during the thermal treatment.