Research Initiation: High-Frequency Resonant-Tunneling Device Employing Metal Multilayers

这项工作是在亚毫米波探测器领域。制备了一种形式为MBMBMBM的多层金属/绝缘子器件。由于三势垒结构，两个金属层被隔离以形成双量子阱结构。理论上，这种多量子阱或共振隧道器件表现出显著的负电阻现象区域，并且在负电阻特征的预期大小和定义方面都存在不足。为了改善这种情况，人们正在努力采用最先进的薄膜沉积技术来单独制备和获得金属和电子势垒薄膜的最佳特性；利用金属/势垒层的超导测试研究，保证高质量电子隧道势垒的形成。

The work is in the field of submillimeter wave detectors. A multiple-layer metal/insulator device of the form MBMBMBM is prepared. Because of the triple-barrier configuration, two metal layers are isolated to form a dual quantum-well structure. In theory, such multiple-quantum-well, or resonant tunneling devices show prominent region of negative resistance phenomena, and fall short in terms of both the expected magnitude and definition of negative resistance features. To ameliorate this situation, efforts are underway to employ state-of-the-art, thin-film deposition techniques to individually prepare and obtain optimal characteristics of both metal and electron-barrier films; and to use superconducting test studies of metal/barrier layers to assure the firmation of high quality electron tunnel barriers.