Research Initiation: High-Frequency Resonant-Tunneling Device Employing Metal Multilayers

研究启动：采用金属多层膜的高频谐振隧道器件

• 批准号: 8506823
• 负责人: Steven Ruggiero
• 金额: $ 5.94万
• 依托单位: University of Notre Dame
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1985
• 资助国家: 美国
• 起止时间: 1985-05-01 至 1987-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8506823&HistoricalAwards=false
• 关键词: Research; Initiation; Frequency; Resonant; Tunneling

The work is in the field of submillimeter wave detectors. A multiple-layer metal/insulator device of the form MBMBMBM is prepared. Because of the triple-barrier configuration, two metal layers are isolated to form a dual quantum-well structure. In theory, such multiple-quantum-well, or resonant tunneling devices show prominent region of negative resistance phenomena, and fall short in terms of both the expected magnitude and definition of negative resistance features. To ameliorate this situation, efforts are underway to employ state-of-the-art, thin-film deposition techniques to individually prepare and obtain optimal characteristics of both metal and electron-barrier films; and to use superconducting test studies of metal/barrier layers to assure the firmation of high quality electron tunnel barriers.

这项工作是在亚毫米波探测器领域。 一 制备MBMBMBM形式的多层金属/绝缘体器件。 由于三势垒配置，两个金属层被 隔离以形成双量子阱结构。 从理论上讲， 多量子阱或共振隧穿器件显示出突出的 负电阻现象的区域，并在 负电阻的预期大小和定义 功能. 为了改善这种情况，正在努力雇用 现有技术的薄膜沉积技术 制备并获得金属和 电子阻挡膜;并使用超导试验研究 金属/阻挡层，以确保高质量电子 隧道屏障