Perpendicular Transport in Multilayer Thin-Film Systems

多层薄膜系统中的垂直传输

• 批准号: 8910434
• 负责人: Steven Ruggiero
• 金额: $ 4万
• 依托单位: University of Notre Dame
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1989
• 资助国家: 美国
• 起止时间: 1989-12-15 至 1991-11-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8910434&HistoricalAwards=false
• 关键词: Perpendicular; Transport; Multilayer; Thin; Film

Work to date on multilayer tunneling systems has resulted in the direct observation of single-electron tunneling effects in ultra- small-capacitance systems containing small (10-100 Angstrom diam.) metal particles. Measurements have also been made of the perpendicular resistivity of thin films. Research will be continued on the use of lithographic methods to permit better control of the fabrication of ultra-small metal and semiconductor dots. More complex structures can then be created, which may allow the observation of high-frequency phenomena akin to the AC Josephson effects. The now-established technique for measuring perpendicular resistivities will be applied to selected multilayer systems, especially Fe-based systems with anomalous magnetotransport properties.

到目前为止，在多层隧穿系统上的工作已经导致在含有小（10-100埃直径）金属粒子的超小电容系统中直接观察到单电子隧穿效应。对薄膜的垂直电阻率也进行了测量。将继续研究使用光刻方法，以便更好地控制超小型金属和半导体点的制造。然后可以创建更复杂的结构，这可能允许观察类似于交流约瑟夫森效应的高频现象。现在建立的垂直电阻率测量技术将应用于选定的多层体系，特别是具有异常磁输运性质的铁基体系。