Engineering Research Equipment Grant: Phosphides by MBE

将购买分子束外延（MBE）系统，用于生长III-V族半导体的磷化物。MBE的一个新研究项目将集中于利用磷化物InP、InGaP和InA1P的外延薄膜生长和表征异质结结构。由此产生的异质结构将为研究独特的异质结带结构以及应用于需要III-V磷化层的器件提供机会。

A molecular beam epitaxy (MBE) system will be purchased and used to grow phosphides of the III-V semiconductor family. A new research program in MBE will concentrate on the growth and characterization of heterojunction structures employing thin epitaxial films of the phosphides InP, InGaP, and InA1P. The resulting heterostructures will provide an opportunity for study of unique heterojunction band structures as well as applications to devices requiring III-V phosphide layers.