Quantizing Effects in Submicron Field Effect Transistors

随着当前微米尺寸的场效应晶体管缩小到1/4微米尺寸，电子波函数的空间量子化和由相空间限制引起的电子散射变化将变得明显。实验将在0.1 ~ 0.3 μ m尺寸的器件中观察电磁感应电子在空间量子化能级之间的跃迁。这些研究可以解决量子统计极限和行为、离散能级结构和单电子行为等问题。

Spatial quantization of the electron wavefunction and changes in electron scattering which result from the concomitant phase space restrictions will become evident as current micron-size field effect transistors are shrunk to 1/4 micron sizes. Experiments will be conducted to observe electromagnetically induced electron transitions between spatially quantized levels in devices of dimension 0.1 to 0.3 um. The issues of quantum-statistical limits and behavior, discrete energy level structure, and single electron behavior may be addressed by these studies.