Quantizing Effects in Submicron Field Effect Transistors

亚微米场效应晶体管的量化效应

• 批准号: 8509135
• 负责人: Robert Wheeler
• 金额: $ 39.22万
• 依托单位: Yale University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1985
• 资助国家: 美国
• 起止时间: 1985-09-15 至 1989-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8509135&HistoricalAwards=false
• 关键词: Quantizing; Effects; Submicron; Field; Effect

Spatial quantization of the electron wavefunction and changes in electron scattering which result from the concomitant phase space restrictions will become evident as current micron-size field effect transistors are shrunk to 1/4 micron sizes. Experiments will be conducted to observe electromagnetically induced electron transitions between spatially quantized levels in devices of dimension 0.1 to 0.3 um. The issues of quantum-statistical limits and behavior, discrete energy level structure, and single electron behavior may be addressed by these studies.

电子波函数的空间量子化和 伴随相空间产生的电子散射 限制将变得明显，因为当前微米尺寸的场效应 晶体管缩小到1/4微米大小。实验将 用于观察电磁感应电子跃迁 在尺寸为0.1至0.3的器件中的空间量化电平之间 嗯. 量子统计极限和行为的问题，离散 能级结构和单电子行为 通过这些研究。