Quantizing Effects in Submicron Field Effect Transistors

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Spatial quantization of the electron wavefunction and changes in electron scattering which result from the concomitant phase space restrictions will become evident as current micron-size field effect transistors are shrunk to 1/4 micron sizes. Experiments will be conducted to observe electromagnetically induced electron transitions between spatially quantized levels in devices of dimension 0.1 to 0.3 um. The issues of quantum-statistical limits and behavior, discrete energy level structure, and single electron behavior may be addressed by these studies.