Inversion/Accumulation Layer Transport on InP and InGaAs

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The proposed research will endeavor to understand 2D transport phenomena in surface inversion and accumulation layers on InP and InGaAs. The present lack of understanding is caused both by the structural/chemical complexity of the surface region and insufficient experimental data and transport modeling of InP/InGaAs devices. The research proposed here will provide detailed transport measurements and interfacial analysis upon which realistic transport models can be founded. This will provide an increased understanding 2D transport at insulator-semiconductor interfaces and advance the development of the MOS devices on InP and InGaAs.