Visible Wavelength Optoelectronic Logic Devices

该项目将研究和开发 光电逻辑器件，其工作在 可见光谱 这些设备将被制造 由InGaP、InGaAlP和GaAs的组合形成; 以前没有使用过的材料 光电逻辑应用 设备 结构将由外延层制造 通过气体源分子束外延生长。 的 本项目的主要目标是确定 上述材料适用于 可见光光电技术的发展 由于目前没有报告 在这个波长下工作的光学逻辑门 范围 发展的潜在影响 可见光谱光学逻辑器件 从InGaP/InGaAlP/GaAs材料系统， 太好了 它不仅可以开启新的研究， 可见光谱光电器件领域， 这将提供更小、更灵敏的像素， 但这些材料也是一种可能的替代品 对于异质结双极晶体管， 目前制造的沟道MODFET AlGaAs/GaAs。

This project will investigate and develop optoelectronic logic devices that operate in the visible spectrum. These devices will be fabricated from combinations of InGaP, InGaAlP and GaAs; materials that have not previously been used for optoelectronic logic applications. The device structures will be fabricate from epitaxial layers grown by gas source molecular beam epitaxy. The primary objective of this project is to determine if the above materials are suitable for the development of visible spectrum optoelectronic devices since there are presently no reported optical logic gates that operate in this wavelength range. The potential impact of the development of visible spectrum optical logic devices fabricated from the InGaP/InGaAlP/GaAs material system is great. Not only could it open up new research in the area of visible spectrum optoelectronic devices, which will provide smaller, more sensitive pixels, but these materials are also a possible replacement for heterojunction bipolar transistor and the p channel MODFET which are presently fabricated from AlGaAs/GaAs.