Visible Wavelength Optoelectronic Logic Devices

该项目将研究和开发在可见光谱中工作的光电逻辑器件。这些器件将由InGaP、InGaAlP和GaAs组合而成；以前没有用于光电逻辑应用的材料。该器件结构将由气源分子束外延生长的外延层制备。该项目的主要目标是确定上述材料是否适合开发可见光谱光电器件，因为目前还没有报道在该波长范围内工作的光逻辑门。InGaP/InGaAlP/GaAs材料体系制造的可见光谱光学逻辑器件的发展具有巨大的潜在影响。它不仅可以在可见光谱光电器件领域开辟新的研究，它将提供更小，更敏感的像素，而且这些材料也可能取代目前由AlGaAs/GaAs制造的异质结双极晶体管和p通道MODFET。

This project will investigate and develop optoelectronic logic devices that operate in the visible spectrum. These devices will be fabricated from combinations of InGaP, InGaAlP and GaAs; materials that have not previously been used for optoelectronic logic applications. The device structures will be fabricate from epitaxial layers grown by gas source molecular beam epitaxy. The primary objective of this project is to determine if the above materials are suitable for the development of visible spectrum optoelectronic devices since there are presently no reported optical logic gates that operate in this wavelength range. The potential impact of the development of visible spectrum optical logic devices fabricated from the InGaP/InGaAlP/GaAs material system is great. Not only could it open up new research in the area of visible spectrum optoelectronic devices, which will provide smaller, more sensitive pixels, but these materials are also a possible replacement for heterojunction bipolar transistor and the p channel MODFET which are presently fabricated from AlGaAs/GaAs.