Visible Wavelength Optoelectronic Logic Devices

该项目将研究和开发工作在可见光光谱中的光电逻辑器件。这些器件将由InGaP、InGaAlP和GaAs的组合制成，这些材料以前从未用于光电子逻辑应用。器件结构将由气态源分子束外延生长的外延层制成。该项目的主要目标是确定上述材料是否适合开发可见光谱光电子器件，因为目前还没有报道在该波长下工作的光学逻辑门射程。用InGaP/InGaAlP/GaAs材料系统制作可见光逻辑器件的潜在影响是巨大的。它不仅可以在可见光光电子器件领域开辟新的研究，提供更小、更灵敏的像素，但这些材料也有可能替代目前由AlGaAs/GaAs制得的异质结双极晶体管和p沟道MODFET。

This project will investigate and develop optoelectronic logic devices that operate in the visible spectrum. These devices will be fabricated from combinations of InGaP, InGaAlP and GaAs; materials that have not previously been used for optoelectronic logic applications. The device structures will be fabricate from epitaxial layers grown by gas source molecular beam epitaxy. The primary objective of this project is to determine if the above materials are suitable for the development of visible spectrum optoelectronic devices since there are presently no reported optical logic gates that operate in this wavelength range. The potential impact of the development of visible spectrum optical logic devices fabricated from the InGaP/InGaAlP/GaAs material system is great. Not only could it open up new research in the area of visible spectrum optoelectronic devices, which will provide smaller, more sensitive pixels, but these materials are also a possible replacement for heterojunction bipolar transistor and the p channel MODFET which are presently fabricated from AlGaAs/GaAs.