Engineering Creativity Award: Point Defect Characterization in GaAs Using Positron Annihilation Lifetime Spectroscopy

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The research involves a study of gallium arsenide lattice by methods of positron annihilation lifetime spectroscopy. The study deals with the point defects in gallium arsenide. After the identification of these defects has been made, the presence of these defects can be followed as a function of thermal treatment as well as manufacturing techniques. Data of this type can help determine the method by which each defect is formed. This project is one supported under the Creativity Awards for Engineering Students.