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Engineering Creativity Award for Mathew Wilson

Engineering Creativity Award for Mathew Wilson
马修·威尔逊工程创意奖
批准号:
9021051
负责人:
Nancy Haegel
金额:
$9.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1990
资助国家:
美国
项目状态:
已结题
起止时间:
1990-09-01 至 1993-08-31

项目摘要

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中文摘要
翻译
本研究项目的目的是调查 d掺杂GaAs的非线性光学性质,并设计和 描述独特的空间电荷结构, 兴奋剂技术其中一个主要目标是合并和 结合了非线性光学和原子层的概念 首次实现半导体掺杂 材料表征的创造性方法, 更好地理解和推进这两个领域 在材料科学中。
英文摘要
The purpose of this research project is to investigate the nonlinear optical properties of d-doped GaAs and to design and characterize unique space charge structures created with this new doping techniques. One of the main objectives is to merge and incorporate the concepts of nonlinear optics and atomic layer doping of semiconductors for the first time by implementing creative methods of materials characterization with hopes of developing a better understanding and advancing both of these areas in materials science.
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ARI-MA Collaborative Research: - High Z Materials for Nuclear Detection: Synergy of Growth, Characterization and Device Physics for Room Temperature Devices
  • 批准号:
    0833007
  • 项目类别:
    Interagency Agreement
  • 资助金额:
    $5.6万
  • 财政年份:
    2008
  • 负责人:
    Nancy Haegel
  • 依托单位:
Collaborative Research: Transport Imaging of Semiconductor Nanowires
  • 批准号:
    0804527
  • 项目类别:
    Interagency Agreement
  • 资助金额:
    $20.99万
  • 财政年份:
    2008
  • 负责人:
    Nancy Haegel
  • 依托单位:
IMR: Development of an Imaging Transport Instrument for Materials Research and Education
  • 批准号:
    0526330
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $28.8万
  • 财政年份:
    2005
  • 负责人:
    Nancy Haegel
  • 依托单位:
POWRE: Imaging Near-Contact Transport in High Resistivity Semiconductors
  • 批准号:
    9720485
  • 项目类别:
    Standard Grant
  • 资助金额:
    $6.65万
  • 财政年份:
    1998
  • 负责人:
    Nancy Haegel
  • 依托单位:
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